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CRD8FF1217P-1中文資料科銳數(shù)據(jù)手冊(cè)PDF規(guī)格書

CRD8FF1217P-1
廠商型號(hào)

CRD8FF1217P-1

功能描述

CREE Silicon Carbide MOSFET Evaluation Kit

文件大小

482.43 Kbytes

頁(yè)面數(shù)量

2 頁(yè)

生產(chǎn)廠商 Cree, Inc
企業(yè)簡(jiǎn)稱

Cree科銳

中文名稱

科銳官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-6 14:41:00

CRD8FF1217P-1規(guī)格書詳情

Description:

This Evaluation kit is meant to demonstrate the high performance of all CREE 1200V MOSFETs and CREE Schottky diodes (SBD) in standard TO-247 package. The kit includes two Cree 80mOhm, 1200V CREE MOSFETs and two 1200V 20A schottky diodes; a half bridge configured evaluation board that includes isolated gate drivers and power supplies and all the other components needed to quickly assemble the half bridge power stage . The basic block diagram and specifications are shown below. The assembly can be easily configured for severa topologies from the basic phase-leg configuration to several other common topologies as shown in the nex section. Additional topologies like H-bridge and 3-phase inverter are possible with two or more of the evaluation kits.

Features:

? Includes all the power stage parts needed to quickly assemble a CREE MOSFET and diode based power converter and get started with SiC devices.

? Easy to use assembly to evaluate CREE MOSFET and Diode performance in a half bridge circuit.

? Easily configurable to different power conversion topologies such as Buck or Boost configurations.

? Easy access to critical test points for measurement including VGS, VDS and IDS.

? Good layout example for properly driving MOSFET and diode with minimal ringing.

? Gate drive schematic and layout reference for a TO-247 packaged CREE MOSFET.

? Comparative testing between CREE devices and IGBTs.

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