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FDB12N50

N-ChannelMOSFET500V,11.5A,0.65廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?RDS(on)=0.55Ω(Typ.)@VGS=10V,ID=6A ?Lowgatecharge(Typ.22nC) ?LowCrss(Typ.12pF) ?Fastswitching ?100avalan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDB12N50

OptimizedSwitchforDiscontinuousCurrentModePowerFactorCorrection

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDB12N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDB12N50F

N-ChannelMOSFET,FRFET500V,11.5A,0.7廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDB12N50F

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

FDB12N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDB12N50TM

N-ChannelMOSFET500V,11.5A,0.65廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?RDS(on)=0.55Ω(Typ.)@VGS=10V,ID=6A ?Lowgatecharge(Typ.22nC) ?LowCrss(Typ.12pF) ?Fastswitching ?100avalan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDB12N50TM

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDB12N50TM

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDB12N50U

N-ChannelMOSFET,FRFET500V,10A,0.8廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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CONVERT/鍇威特
24+
TO220F-3
5000
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HUAJING
23+
TO-220
10000
公司只做原裝正品
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HUAJING
TO-220
22+
6000
十年配單,只做原裝
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HUAJING
23+
TO-220
6000
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HUAJING
22+
TO-220
25000
只做原裝進口現(xiàn)貨,專注配單
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華晶
2024+
TO220FTO220
188600
全新原廠原裝正品現(xiàn)貨 歡迎咨詢
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華晶
2315+
TO220
28000
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HUAJING
24+
TO-TO-220
12300
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LX廠家
23+
TO-220F
116480
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24+
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8866666
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更多CS12N50F供應(yīng)商 更新時間2025-1-21 9:36:00