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EMB16N06A

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID42A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06CS

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06G

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID6.7A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06H

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID42A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06V

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID15A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

FTP16N06N

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

NP16N06QLK

DualN-channelPowerMOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP16N06YLL

60V??16A??N-channelPowerMOSFETApplication:Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

PJD16N06A

60VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@8A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJD16N06A-AU

60VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@8A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

RFD16N06

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

RFD16N06

16A,60V,0.047Ohm,N-ChannelPowerMOSFET

Description TheseN-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.ThisprocesswhichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

Intersil

Intersil Corporation

RFD16N06LE

16A,60V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingamodernprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance. Features ?16A,60V ?rDS(ON)=0.047? ?TemperatureCompensati

Intersil

Intersil Corporation

RFD16N06LESM

16A,60V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingamodernprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance. Features ?16A,60V ?rDS(ON)=0.047? ?TemperatureCompensati

Intersil

Intersil Corporation

RFD16N06LESM

16A,60V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingamodernprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance. Features ?16A,60V ?rDS(ON)=0.047? ?TemperatureCompensati

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD16N06LESM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

RFD16N06SM

16A,60V,0.047Ohm,N-ChannelPowerMOSFET

Description TheseN-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.ThisprocesswhichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

Intersil

Intersil Corporation

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華潤(rùn)華晶
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14520
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華潤(rùn)華晶
1236+
SOP8
12000
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華潤(rùn)華晶
23+
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10000
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CONVERT/鍇威特
24+
TO220-3
5000
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LX廠家
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CONVERTSEMICONDUCTOR鍇威特半導(dǎo)
23+
TO-220F
22820
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華晶
TO-220F
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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CONVERT
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4630
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更多CS16N06AE-G供應(yīng)商 更新時(shí)間2025-1-16 15:00:00

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