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38N30

300VN-ChannelMOSFET

Description UniFET?MOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitable

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDA38N30

N-ChannelMOSFET300V,38A,0.085廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDA38N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=38A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDA38N30

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDB38N30U

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=38A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=120mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDB38N30U

N-ChannelUniFETTMUltraFRFETTMMOSFET

Description UniFETMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andto providebetterswitchingperformanceandhigheravalancheenergystrength.UniFETUltraFRFET MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA38N30

300VN-ChannelMOSFET

Description UniFET?MOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitable

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA38N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=38.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP38N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=38A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH38N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=38A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=100mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andCurrentRegulators

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
華晶
TO-3P(N)
80000000
2013
詢價
華晶
23+
TO-3P(N)
60565
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
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infineon
23+
6000
代理原裝正品
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CS/華潤華晶
2023+
8700
原裝現(xiàn)貨
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CS華晶
2024+
TO-3P(N)
188600
全新原廠原裝正品現(xiàn)貨 歡迎咨詢
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CRMICRO/華潤微
24+
TO-3PN
50000
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Teledyne
24+
1
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TELEDYNE
2023+
25
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CIRRUSLOGIC
2005
NA
880000
明嘉萊只做原裝正品現(xiàn)貨
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2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
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更多CS38N30AN供應(yīng)商 更新時間2025-1-21 15:30:00

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