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STUP582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-440Volts PPK:400Watts FEATURES: *400Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree

EIC

EIC discrete Semiconductors

STUP582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STUS582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STUS582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

*500Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V

EIC

EIC discrete Semiconductors

TMUX582FPWTSEP

TMUX582F-SEPRadiation-Tolerant60VProtected,Latch-UpImmune8:1MultiplexerwithAdjustableFaultThreshold

1Features ?VIDV62/23607-01XE ?Radiationhardened –Singleeventlatch-up(SEL)immuneto43MeVcm2/ mgat125°C –ELDRSfreeto30krad(Si) –Totalionizingdose(TID)RLATforeverywafer lotupto30krad(Si) –TIDcharacterizedupto30krad(Si) –Singleeventtransient(SET)characte

TITexas Instruments

德州儀器美國德州儀器公司

TMUX582F-SEP

TMUX582F-SEP±60-VProtected,Latch-upImmune8:1MultiplexerwithAdjustableFaultThresholdsinSpaceEnhancedPlastic

1Features ?Radiationhardened ?Singleeventlatch-up(SEL)immuneto43MeVcm2/ mgat125°C ?ELDRSfreeto30krad(Si) ?Totalionizingdose(TID)RLATforeverywaferlot upto20krad(Si) ?TIDcharacterizedupto50krad(Si) ?Spaceenhancedplastic ?Supplyrange:8Vto22Vor±

TITexas Instruments

德州儀器美國德州儀器公司

TMUX582F-SEP

TMUX582F-SEPRadiation-Tolerant60VProtected,Latch-UpImmune8:1MultiplexerwithAdjustableFaultThreshold

1Features ?VIDV62/23607-01XE ?Radiationhardened –Singleeventlatch-up(SEL)immuneto43MeVcm2/ mgat125°C –ELDRSfreeto30krad(Si) –Totalionizingdose(TID)RLATforeverywafer lotupto30krad(Si) –TIDcharacterizedupto30krad(Si) –Singleeventtransient(SET)characte

TITexas Instruments

德州儀器美國德州儀器公司

TSB582

200mAoutputcurrentwiththermalshutdownandoutputcurrentlimiter,3.1MHz,36V,BiCMOSdualoperationalamplifier

Features ?Widesupplyvoltage:4V-36V ?Highoutputcurrent200mA ?Rail-to-railoutput,lowrailinput ?Gainbandwidthproduct:3.1MHz ?Highslewrate:2V/μs ?Internalthermalshutdown&outputcurrentlimiter ?EnhancedRFnoiseimmunity ?HightolerancetoESD:4kVHBM ?Ex

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

TSB582IDT

200mAoutputcurrentwiththermalshutdownandoutputcurrentlimiter,3.1MHz,36V,BiCMOSdualoperationalamplifier

Features ?Widesupplyvoltage:4V-36V ?Highoutputcurrent200mA ?Rail-to-railoutput,lowrailinput ?Gainbandwidthproduct:3.1MHz ?Highslewrate:2V/μs ?Internalthermalshutdown&outputcurrentlimiter ?EnhancedRFnoiseimmunity ?HightolerancetoESD:4kVHBM ?Ex

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

TSB582IYDT

200mAoutputcurrentwiththermalshutdownandoutputcurrentlimiter,3.1MHz,36V,BiCMOSdualoperationalamplifier

Features ?Widesupplyvoltage:4V-36V ?Highoutputcurrent200mA ?Rail-to-railoutput,lowrailinput ?Gainbandwidthproduct:3.1MHz ?Highslewrate:2V/μs ?Internalthermalshutdown&outputcurrentlimiter ?EnhancedRFnoiseimmunity ?HightolerancetoESD:4kVHBM ?Ex

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    CT-582T

  • 制造商：

    BERNSTEIN

  • 功能描述：

    BOX ABS IP65 CLEAR LID

  • 制造商：

    Bernstein AG

  • 功能描述：

    BOX, ABS, IP65, CLEAR LID

  • 功能描述：

    BOX, ABS, IP65, CLEAR LID; Enclosure

  • Type：

    Multipurpose; Enclosure

  • Material：

    ABS; Body

  • Colour：

    Grey; External Height -

  • Imperial：

    2.17"; External Height -

  • Metric：

    55mm; External Width -

  • Imperial：

    3.15"; External Width -

  • Metric：

    80mm; ;RoHS

  • Compliant：

    Yes

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24+
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13
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2021
BGA
1000
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23+
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9920
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22+
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6800
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xilinx
23+
QFP
8000
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CREATIVE
16+
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2500
進(jìn)口原裝現(xiàn)貨/價格優(yōu)勢!
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24+
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90000
進(jìn)口原裝現(xiàn)貨假一罰十價格合理
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20000
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅?。?/div>
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CREATIVE
24+
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35200
一級代理/放心采購
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更多CT-582T供應(yīng)商 更新時間2025-3-13 16:30:00

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