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CZRB2017

SurfaceMountZenerDiode

Voltage:11-100VoltsPower:2.0Watt Features -Forsurfacemountedapplicationsinordertooptimizeboardspace -Lowprofilepackage -Built-instrainrelief -Glasspassivatedjunction -Lowinductance -Excellentclampingcapability -TypicalIlessthan1uAabove11VD -Highte

COMCHIPComchip Technology

典琦典琦科技股份有限公司

D2017M

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

General-PurposeSwitchingDeviceApplications Features ?LowON-resistance. ?2.5Vdrive. ?Mountheight1.1mm. ?Compositetype,facilitatinghigh-densitymounting. ?Draincommonspecifications.

SANYOSanyo

三洋三洋電機(jī)株式會(huì)社

D2017UK

METALGATERFSILICONFET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET5W–28V–1GHzSINGLEENDED FEATURES ?SIMPLIFIEDAMPLIFIERDESIGN ?SUITABLEFORBROADBANDAPPLICATIONS ?LOWCrss ?SIMPLEBIASCIRCUITS ?LOWNOISE ?HIGHGAIN–13dBMINIMUM APPLICATIONS ?VHF/UHFCOMMUNICATIONSfromDCto1GHz

SEME-LAB

Seme LAB

DG2017

Low-Voltage,LowON,DualDPDTAnalogSwitch

DESCRIPTION TheDG2017isadualDPDT(double-pole/double-throw),optimizedforhighperformanceanalogswitching,andspecificallydesignedtobenefitportableaudioapplications. FEATURES ?Halogen-freeaccordingtoIEC61249-2-21Definition ?Lowvoltageoperation(2Vto5.5V) ?Lowon-r

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG2017

Low-Voltage,LowRON,DualDPDTAnalogSwitch

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG2017

Low-Voltage,LowRON,DualDPDTAnalogSwitch

FEATURES ?Lowvoltageoperation(2Vto5.5V) ?Lowon-resistanceat2.7V-RON: SW1,SW2-3.2? SW3,SW4-0.64? ?Fastswitching:tON=46ns tOFF=21ns ?QFN-16(4mmx4mm)package ?Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG2017DN

Low-Voltage,LowON,DualDPDTAnalogSwitch

DESCRIPTION TheDG2017isadualDPDT(double-pole/double-throw),optimizedforhighperformanceanalogswitching,andspecificallydesignedtobenefitportableaudioapplications. FEATURES ?Halogen-freeaccordingtoIEC61249-2-21Definition ?Lowvoltageoperation(2Vto5.5V) ?Lowon-r

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DW2017

CONTENTS

ETCList of Unclassifed Manufacturers

未分類制造商

EEH2017

DC-DCCONVERTER(PIN)

OUTLINE 1.Thisissmallsizeandhighefficientup-downconvertertransformerwhichis2in1construction.(ex.SEPICconverter) 2.Itispossibletooutputthehighvoltagewhichishardtoobtainwithanordinaryinductorwithsufficientaccuracy. 3.ItisavailableforawhiteLEDbacklig

SUMIDASumida America Components Inc.

勝美達(dá)電子

EF2017

GeneralPower&PoETransformerType:EF>series>

SUMIDASumida America Components Inc.

勝美達(dá)電子

EF2017B

GeneralPowerTransformer>Series>

SUMIDASumida America Components Inc.

勝美達(dá)電子

ENA2017B

SystemPowerSupplyICforAutomotiveInfotainmentMultipleOutputLinearVoltageRegulator

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

F2017ERW

LowCost,Compact20W,2:1InputRangeDC/DCConverters

KeyFeatures: ?20WOutputPower ?2:1InputVoltageRange ?1,500VDCIsolation ?Single&DualOutputs ?Efficiencyto86 ?Compact1.6x2In.Case ?-40°Cto+71°COperation ?IndustryStandardPin-Out ?LowestCost!!

MPD

MPD (Memory Protection Devices)

F2017ERW

F2000ERWSERIES

MPD

MPD (Memory Protection Devices)

FMS2017

2.4GHzDPDTGaAsSingle-BandWLANSwitch

FILTRONIC

Filtronic Compound Semiconductors

FMS2017QFN

2.4GHzDPDTGaAsSingle-BandWLANSwitch

FILTRONIC

Filtronic Compound Semiconductors

FTD2017

LoadSwitchingApplications

LoadSwitchingApplications Features ?LowONresistance. ?2.5Vdrive. ?Mountingheight1.1mm. ?Compositetype,facilitatinghigh-densitymounting.

SANYOSanyo

三洋三洋電機(jī)株式會(huì)社

FTD2017

DualN-Channel25-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

FTD2017A

DualN-Channel25-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

FTD2017C

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

General-PurposeSwitchingDeviceApplications Features ?LowON-resistance ?2.5Vdrive ?Mountheigt1.1mm ?Compositetype,facilitatinghigh-densitymounting ?Draincommonspecifications ?Halogenfreecompliance

SANYOSanyo

三洋三洋電機(jī)株式會(huì)社

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