CXK5V8257BM中文資料索尼數(shù)據(jù)手冊(cè)PDF規(guī)格書

Description

The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits.

A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability.

Operating on a single 3.3V supply, directly LVTTL compatible (All inputs and outputs).

And special feature are, low power consumption, high speed and broad package line-up.

The CXK5V8257BTM/BYM/BM is a suitable RAM for portable equipment with battery back up.

Features

? Single +3.3V supply: 3.3V ±0.3V

? Directly LVTTL compatible: All inputs and outputs

? Fast access time: (Access time)

CXK5V8257BTM/BYM/BM

-70LL 70ns (Max.)

-10LL 100ns (Max.)

? Low standby current:

CXK5V8257BTM/BYM/BM

-70LL/10LL 3.5μA (Max.)

? Low power data retention: 2.0V (Min.)

? Available in many packages

CXK5V8257BTM/BYM 8mm × 13.4mm 28 pin TSOP Package

CXK5V8257BM 450mil 28 pin SOP Package

Function

32768-word × 8 bit static RAM