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MAX853ISA

Low-Noise,Regulated,NegativeCharge-PumpPowerSuppliesforGaAsFETBias

GeneralDescription TheMAX850–MAX853low-noise,inverting,chargepumppowersuppliesareidealforbiasingGaAsFETsincellulartelephonetransmitteramplifiers. TheMAX850–MAX852offerbothpreset(-4.1V)andadjustable(-0.5Vto-9.0V)outputvoltages.TheMAX853usesanexternalpositiveco

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MC853

INTEGRATEDCIRCUITS

INTEGRATEDCIRCUITSFROMMOTOROLA MDTLintegratedcircuitsprovideanexcellentbalanceofspeedpowerdissipation,andnoiseimmunityforgeneralpurposedigitalapplications.Thelineincludesmanymultifunctiontypes.AdditionallogicpowerisprovidedbythewiredORcapabilityofthebasicM

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MPC853T

MPC853THardwareSpecification

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MPC853TEC

MPC853THardwareSpecification

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MUR853

GLASSPASSIVATEDSUPERFASTRECTIFIER

FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ?Fastswitchingforhighefficiency ?Lowforwardvoltagedrop ?Singlerectifierconstruction ?Highsurgecapability ?Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolaritypro

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

MUR853

GLASSPASSIVATEDSUPERFASTRECTIFIER

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

MZ853

3WATTGLASSZENERDIODES

FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance.

MicrosemiMicrosemi Corporation

美高森美美高森美公司

NDH853N

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance.Thes

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NTE853

IntegratedCircuitLowPower,NarrowBand,FMIFSystem

Description: TheNTE853isalowpowernarrowbandFMIFsystemwhichincludes:Oscillator,Mixer,LimitingAmplifier,QuadratureDiscriminator,ActiveFilter,Squelch,ScanControlandMuteSwitch.TheNTE853isdesignedforuseinFMdualconversioncommunicationsequipment. Features: ●LowD

NTE

NTE Electronics

PC853

HighCollector-emitterVoltageTypePhotocouplers

1.Highcollector-emittervoltage 2.Highcurrenttransferratio 3.Highisolationvoltagebetweeninputandoutput 4.Compactdual-in-linepackage

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司（SMA）

詳細(xì)參數(shù)

  • 型號(hào)：

    CXT853

  • 功能描述：

    兩極晶體管 - BJT Small Signal Transistor

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    PNP 集電極—基極電壓

  • VCBO：

    集電極—發(fā)射極最大電壓

  • VCEO：

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO：

    - 6 V

  • 增益帶寬產(chǎn)品fT：

    直流集電極/Base Gain hfe

  • Min：

    100 A

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    PowerFLAT 2 x 2

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更多CXT853供應(yīng)商 更新時(shí)間2025-4-26 10:00:00

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