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CY14B108L

8 Mbit (1024K x 8/512K x 16) nvSRAM

FunctionalDescription TheCypressCY14B108L/CY14B108NisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas1024Kbytesof8bitseachor512Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewor

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L

8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L

8-Mbit (1024 K ? 8/512 K ? 16) nvSRAM

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L-BA20XC

8 Mbit (1024K x 8/512K x 16) nvSRAM

FunctionalDescription TheCypressCY14B108L/CY14B108NisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas1024Kbytesof8bitseachor512Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewor

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L-BA20XCT

8 Mbit (1024K x 8/512K x 16) nvSRAM

FunctionalDescription TheCypressCY14B108L/CY14B108NisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas1024Kbytesof8bitseachor512Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewor

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L-BA20XI

8 Mbit (1024K x 8/512K x 16) nvSRAM

FunctionalDescription TheCypressCY14B108L/CY14B108NisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas1024Kbytesof8bitseachor512Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewor

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L-BA20XIT

8 Mbit (1024K x 8/512K x 16) nvSRAM

FunctionalDescription TheCypressCY14B108L/CY14B108NisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas1024Kbytesof8bitseachor512Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewor

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L-BA25XC

8 Mbit (1024K x 8/512K x 16) nvSRAM

FunctionalDescription TheCypressCY14B108L/CY14B108NisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas1024Kbytesof8bitseachor512Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewor

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L-BA25XCT

8 Mbit (1024K x 8/512K x 16) nvSRAM

FunctionalDescription TheCypressCY14B108L/CY14B108NisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas1024Kbytesof8bitseachor512Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewor

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L-BA25XI

8 Mbit (1024K x 8/512K x 16) nvSRAM

FunctionalDescription TheCypressCY14B108L/CY14B108NisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas1024Kbytesof8bitseachor512Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewor

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L-BA25XIT

8 Mbit (1024K x 8/512K x 16) nvSRAM

FunctionalDescription TheCypressCY14B108L/CY14B108NisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas1024Kbytesof8bitseachor512Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewor

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L-BA45XC

8 Mbit (1024K x 8/512K x 16) nvSRAM

FunctionalDescription TheCypressCY14B108L/CY14B108NisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas1024Kbytesof8bitseachor512Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewor

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L-BA45XCT

8 Mbit (1024K x 8/512K x 16) nvSRAM

FunctionalDescription TheCypressCY14B108L/CY14B108NisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas1024Kbytesof8bitseachor512Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewor

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L-BA45XI

8 Mbit (1024K x 8/512K x 16) nvSRAM

FunctionalDescription TheCypressCY14B108L/CY14B108NisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas1024Kbytesof8bitseachor512Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewor

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L-BA45XIT

8 Mbit (1024K x 8/512K x 16) nvSRAM

FunctionalDescription TheCypressCY14B108L/CY14B108NisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas1024Kbytesof8bitseachor512Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewor

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L-ZS20XC

8 Mbit (1024K x 8/512K x 16) nvSRAM

FunctionalDescription TheCypressCY14B108L/CY14B108NisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas1024Kbytesof8bitseachor512Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewor

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L-ZS20XCT

8 Mbit (1024K x 8/512K x 16) nvSRAM

FunctionalDescription TheCypressCY14B108L/CY14B108NisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas1024Kbytesof8bitseachor512Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewor

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L-ZS20XI

8 Mbit (1024K x 8/512K x 16) nvSRAM

FunctionalDescription TheCypressCY14B108L/CY14B108NisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas1024Kbytesof8bitseachor512Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewor

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L-ZS20XIT

8 Mbit (1024K x 8/512K x 16) nvSRAM

FunctionalDescription TheCypressCY14B108L/CY14B108NisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas1024Kbytesof8bitseachor512Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewor

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

CY14B108L-ZS25XC

8 Mbit (1024K x 8/512K x 16) nvSRAM

FunctionalDescription TheCypressCY14B108L/CY14B108NisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas1024Kbytesof8bitseachor512Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewor

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導體公司

詳細參數(shù)

  • 型號:

    CY14B108L

  • 制造商:

    CYPRESS

  • 制造商全稱:

    Cypress Semiconductor

  • 功能描述:

    8 Mbit(1024K x 8/512K x 16) nvSRAM

供應商型號品牌批號封裝庫存備注價格
Cypress
44-TSOP
40
Cypress一級分銷,原裝原盒原包裝!
詢價
CYP
24+
20
詢價
CYPRESS
17+
TSOP
6200
100%原裝正品現(xiàn)貨
詢價
CYPRESS
2016+
BGA
3526
假一罰十進口原裝現(xiàn)貨原盤原標!
詢價
CYPRESS
19+
SOP
68495
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價
CYPRESS
23+
NA
1354
專業(yè)電子元器件供應鏈正邁科技特價代理QQ1304306553
詢價
Cypress
23+
NA
10726
專做原裝正品,假一罰百!
詢價
CYP
18+
TSSOP
85600
保證進口原裝可開17%增值稅發(fā)票
詢價
CYPRESS/賽普拉斯
20+
TSOP-44
6600
原裝現(xiàn)貨,特價出售。
詢價
CYPRESS
2020+
TSOP
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
更多CY14B108L供應商 更新時間2025-1-7 12:06:00