CY15B201QSN中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書

Features

? 1-Mb ferroelectric random access memory (F-RAM) logically organized as 128K × 8

- Virtually unlimited endurance of 10 trillion (1013) read/write cycles

- 121-year data retention (See “Data retention and endurance” on page 102)

- Infineon instant non-volatile write technology

- Advanced high-reliability ferroelectric process

? Single and multi I/O serial peripheral interface (SPI)

- Serial bus interface SPI protocols

- Supports SPI mode 0 (0, 0) and mode 3 (1, 1) for all SDR mode transfers

- Supports SPI mode 0 (0, 0) for all DDR mode transfers

- Extended I/O SPI protocols

- Dual SPI (DPI) protocols

- Quad SPI (QPI) protocols

? SPI clock frequency

- Up to 108-MHz frequency SPI single data rate (SDR)

- Up to 54-MHz frequency SPI double data rate (DDR)

? eXecute in Place (XiP) for memory read/write

? Write protection, data security, and data integrity

? Hardware protection using the Write Protect (WP) pin

? Software block protection

? Embedded error correction code (ECC) and cyclic redundancy check (CRC) for enhanced data integrity

- ECC detects and corrects 1-bit error. If a 2-bit error occurs, it does not correct but reports through the ECC

Status register

- CRC detects any accidental change to raw data

? Extended electronic signatures

- Device ID includes manufacturer ID and product ID

- Unique ID

- User programmable Serial Number

? Dedicated 256-byte special sector F-RAM

- Dedicated special sector write and read

- Content can survive up to three standard reflow cycles

? Low-power consumption at high speed

- 11 mA (typ) active current for 108 MHz SPI SDR

- 19 mA (typ) active current for 108 MHz QSPI SDR and 54-MHz QSPI DDR

- 200 μA (typ) standby current

- 1.3 μA (typ) deep power down mode current

- 0.1 μA (typ) hibernate mode current

? Low-voltage operation:

- CY15B201QSN: VDD = 1.8 V to 3.6 V