CY15V108QN集成電路（IC）的存儲器規(guī)格書PDF中文資料

Features

? 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8

- Virtually unlimited endurance 100 trillion (1014) read/writes

- 151-year data retention (see “Data retention and endurance” on page 24)

- Infineon instant non-volatile write technology

- Advanced high-reliability ferroelectric process

? Fast SPI (FSPI)

- Up to 50 MHz frequency

- Supports SPI Mode 0 (0, 0) and Mode 3 (1, 1)

? Sophisticated write protection scheme

- Hardware protection using the write protect (WP) pin

- Software protection using write disable (WRDI) instruction

- Software block protection for 1/4, 1/2, or entire array

? Device ID and serial number

- Manufacturer ID and product ID

- Unique device ID

- Serial number

? Dedicated 256-byte special sector F-RAM

- Dedicated special sector write and read

- Stored content can survive up to three standard reflow soldering cycles

? Low-power consumption

- 5.5 mA (typ) active current at 50 MHz

- 9 μA (typ) standby current

- 1.10 μA (typ) Deep Power-down mode current

- 0.1 μA (typ) Hibernate mode current

? Low-voltage operation

- CY15V108QN: VDD = 1.71 V to 1.89 V

- CY15B108QN: VDD = 1.8 V to 3.6 V

? Operating temperature

- Extended industrial (Q): -40°C to +105°C

? Package

- 24-ball fine pitch ball grid array (24-ball FBGA)

? Restriction of hazardous substances (RoHS) compliant