CY62136VLL-70ZSXE集成電路（IC）的存儲器規(guī)格書PDF中文資料

Functional Description[1]

The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.

This is ideal for providing More Battery Life? (MoBL?) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99 when addresses are not toggling. The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O 15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

Features

? High speed

— 55 ns

? Temperature Ranges

— Industrial: –40°C to 85°C

— Automotive: –40°C to 125°C

? Wide voltage range

— 2.7V – 3.6V

? Ultra-low active, standby power

? Easy memory expansion with CE and OE features

? TTL-compatible inputs and outputs

? Automatic power-down when deselected

? CMOS for optimum speed/power

? Available in a Pb-free and non Pb-free 44-pin TSOP

Type II (forward pinout) and 48-ball FBGA packages