CY7C1019-12VC中文資料賽普拉斯數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Functional Description

The CY7C1019 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE), an active LOW output enable (OE), and three-state drivers. This device has an automatic power-down feature that significantly reduces power consumption when deselected.

Writing to the device is accomplished by taking chip enable (CE) and write enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16).

Reading from the device is accomplished by taking chip enable (CE) and output enable (OE) LOW while forcing write enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW, and WE LOW).

The CY7C1019 is available in standard 400-mil-wide SOJs.

Features

? High speed

— tAA = 10 ns

? CMOS for optimum speed/power

? Center power/ground pinout

? Automatic power-down when deselected

? Easy memory expansion with CE and OE options