CY7C1049CV33集成電路（IC）的存儲(chǔ)器規(guī)格書PDF中文資料

Functional Description

The CY7C1049CV33 is a high performance Complementary metal oxide semiconductor (CMOS) Static RAM organized as 524,288 words by eight bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18).

Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins. The eight input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW, and WE LOW).

The CY7C1049CV33 is available in standard 44-pin TSOP II package with center power and ground (revolutionary) pinout.

Features

■ Temperature ranges

? Commercial: 0 °C to 70 °C

? Industrial: –40 °C to 85 °C

■ High speed

? tAA = 8 ns

■ Low active power

? 360 mW (max)

■ 2.0 V data retention

■ Automatic power down when deselected

■ Transistor- transistor logic (TTL) compatible inputs and outputs

■ Easy memory expansion with CE and OE features