CY7C1061G集成電路（IC）的存儲器規(guī)格書PDF中文資料

Functional Description

CY7C1061G and CY7C1061GE are high-performance CMOS fast static RAM devices with embedded ECC[1]. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY7C1061GE device includes an ERR pin that signals a single-bit error-detection and correction event during a read cycle.

Features

■ High speed

? tAA = 10 ns/15 ns

■ Embedded error-correcting code (ECC) for single-bit error correction

■ Low active and standby currents

? ICC = 90-mA typical at 100 MHz

? ISB2 = 20-mA typical

■ Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V

■ 1.0-V data retention

■ Transistor-transistor logic (TTL) compatible inputs and outputs

■ Error indication (ERR) pin to indicate 1-bit error detection and correction

■ Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages