CY7C106B中文資料賽普拉斯數(shù)據(jù)手冊PDF規(guī)格書

Functional Description

The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65 when the devices are deselected.

Features

? High speed

— tAA = 12 ns

? CMOS for optimum speed/power

? Low active power

— 495 mW

? Low standby power

— 275 mW

? 2.0V data retention (optional)

— 100 μW

? Automatic power-down when deselected

? TTL-compatible inputs and outputs