CY7C1328G集成電路（IC）的存儲器規(guī)格書PDF中文資料

Functional Description[1]

The CY7C1328G SRAM integrates 256K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation.

Features

? Registered inputs and outputs for pipelined operation

? Optimal for performance (Double-Cycle deselect)

— Depth expansion without wait state

? 256K × 18 common I/O architecture

? 3.3V core power supply (VDD)

? 3.3V/2.5V I/O power supply (VDDQ)

? Fast clock-to-output times

— 2.6 ns (for 250-MHz device)

? Provide high-performance 3-1-1-1 access rate

? User-selectable burst counter supporting Intel? Pentium? interleaved or linear burst sequences

? Separate processor and controller address strobes

? Synchronous self-timed writes

? Asynchronous Output Enable

? Available in lead-free 100-Pin TQFP package

? “ZZ” Sleep Mode option