CY7C1353F集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

Functional Description[1]

The CY7C1353F is a 3.3V, 256K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1353F is equipped with the advanced No Bus Latency? (NoBL?) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent Write-Read transitions.

Features

? Can support up to 133-MHz bus operations with zero wait states

— Data is transferred on every clock

? Pin compatible and functionally equivalent to ZBT? devices

? Internally self-timed output buffer control to eliminate the need to use OE

? Registered inputs for flow-through operation

? Byte Write capability

? 256K x 18 common I/O architecture

? 2.5V / 3.3V I/O power supply

? Fast clock-to-output times

— 6.5 ns (for 133-MHz device)

— 7.5 ns (for 117-MHz device)

— 8.0 ns (for 100-MHz device)

— 11.0 ns (for 66-MHz device)

? Clock Enable (CEN) pin to suspend operation

? Synchronous self-timed writes

? Asynchronous Output Enable

? JEDEC-standard 100 TQFP package

? Burst Capability—linear or interleaved burst order

? Low standby power