CY7C1373D-100AXC集成電路（IC）的存儲器規(guī)格書PDF中文資料

Functional Description[1]

The CY7C1371D/CY7C1373D is a 3.3V, 512K x 36/1 Mbit x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1371D/ CY7C1373D is equipped with the advanced No Bus Latency (NoBL) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent Write-Read transitions.

Features

? No Bus Latency? (NoBL?) architecture eliminates dead cycles between write and read cycles

? Can support up to 133-MHz bus operations with zero wait states

— Data is transferred on every clock

? Pin-compatible and functionally equivalent to ZBT? devices

? Internally self-timed output buffer control to eliminate the need to use OE

? Registered inputs for flow-through operation

? Byte Write capability

? 3.3V/2.5V I/O power supply

? Fast clock-to-output times

— 6.5 ns (for 133-MHz device)

— 8.5 ns (for 100-MHz device)

? Clock Enable (CEN) pin to enable clock and suspend operation

? Synchronous self-timed writes

? Asynchronous Output Enable

? Offered in JEDEC-standard lead-free 100 TQFP, 119-ball BGA and 165-ball fBGA packages

? Three chip enables for simple depth expansion

? Automatic Power-down feature available using ZZ mode or CE deselect

? JTAG boundary scan for BGA and fBGA packages

? Burst Capability—linear or interleaved burst order

? Low standby power