CY7C1380CV25中文資料賽普拉斯數(shù)據(jù)手冊PDF規(guī)格書

Functional Description

The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors.

Features

? Fast clock speed: 250, 225, 200, 167 MHz

? Provide high-performance 3-1-1-1 access rate

? Fast OE access times: 2.6, 2.8, 3.0, 3.4 ns

? Optimal for depth expansion

? Single 2.5V ±5 power supply

? Common data inputs and data outputs

? Byte Write Enable and Global Write control

? Chip enable for address pipeline

? Address, data, and control registers

? Internally self-timed Write cycle

? Burst control pins (interleaved or linear burst sequence)

? Automatic power-down available using ZZ mode or CE deselect

? Available in 119-ball bump BGA, 165-ball FBGA and 100-pin TQFP packages

? JTAG boundary scan for BGA packaging version