CY7C2170KV18集成電路（IC）的存儲器規(guī)格書PDF中文資料

Functional Description

The CY7C2168KV18, and CY7C2170KV18 are 1.8 V Synchronous Pipelined SRAMs equipped with DDR II+ architecture. The DDR II+ consists of an SRAM core with advanced synchronous peripheral circuitry. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of K and K. Each address location is associated with two 18-bit words (CY7C2168KV18), or 36-bit words (CY7C2170KV18) that burst sequentially into or out of the device.

Features

■ 18-Mbit density (1 M × 18, 512 K × 36)

■ 550-MHz clock for high bandwidth

■ Two-word burst for reducing address bus frequency

■ Double data rate (DDR) interfaces (data transferred at 1100 MHz) at 550 MHz

■ Available in 2.5 clock cycle latency

■ Two input clocks (K and K) for precise DDR timing

? SRAM uses rising edges only

■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems

■ Data valid pin (QVLD) to indicate valid data on the output

■ On-die termination (ODT) feature

? Supported for D[x:0], BWS[x:0], and K/K inputs

■ Synchronous internally self-timed writes

■ DDR II+ operates with 2.5 cycle read latency when DOFF is asserted HIGH

■ Operates similar to DDR I device with one cycle read latency when DOFF is asserted LOW

■ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to VDD[1]

? Supports both 1.5 V and 1.8 V I/O supply

■ HSTL inputs and variable drive HSTL output buffers

■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)

■ CY7C2168KV18 offered in non Pb-free packages and CY7C2170KV18 offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

■ Phase locked loop (PLL) for accurate data placement