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CY7C25632KV18集成電路(IC)的存儲器規(guī)格書PDF中文資料
廠商型號 |
CY7C25632KV18 |
參數屬性 | CY7C25632KV18 封裝/外殼為165-LBGA;包裝為卷帶(TR);類別為集成電路(IC)的存儲器;產品描述:IC SRAM 72MBIT PARALLEL 165FBGA |
功能描述 | 72-Mbit QDR? II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
封裝外殼 | 165-LBGA |
文件大小 |
496.32 Kbytes |
頁面數量 |
31 頁 |
生產廠商 | CypressSemiconductor |
企業(yè)簡稱 |
Cypress【賽普拉斯】 |
中文名稱 | 賽普拉斯半導體公司官網 |
原廠標識 | |
數據手冊 | |
更新時間 | 2025-1-12 22:30:00 |
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CY7C25632KV18規(guī)格書詳情
Functional Description
The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus that exists with common I/O devices. Each port is accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock.
Features
■ Separate independent read and write data ports
? Supports concurrent transactions
■ 550 MHz clock for high bandwidth
■ Four-word burst for reducing address bus frequency
■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz
■ Available in 2.5 clock cycle latency
■ Two input clocks (K and K) for precise DDR timing
? SRAM uses rising edges only
■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems
■ Data valid pin (QVLD) to indicate valid data on the output
■ On-die termination (ODT) feature
? Supported for D[x:0], BWS[x:0], and K/K inputs
■ Single multiplexed address input bus latches address inputs for read and write ports
■ Separate port selects for depth expansion
■ Synchronous internally self-timed writes
■ QDR? II+ operates with 2.5 cycle read latency when DOFF is asserted HIGH
■ Operates similar to QDR I device with 1 cycle read latency when DOFF is asserted LOW
■ Available in × 18, and × 36 configurations
■ Full data coherency, providing most current data
■ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to VDD [1]
? Supports both 1.5 V and 1.8 V I/O supply
■ HSTL inputs and variable drive HSTL output buffers
■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ JTAG 1149.1 compatible test access port
■ Phase-locked loop (PLL) for accurate data placement
產品屬性
- 產品編號:
CY7C25632KV18-400BZC
- 制造商:
Cypress Semiconductor Corp
- 類別:
集成電路(IC) > 存儲器
- 包裝:
卷帶(TR)
- 存儲器類型:
易失
- 存儲器格式:
SRAM
- 技術:
SRAM - 雙端口
- 存儲容量:
72Mb(4M x 18)
- 存儲器接口:
并聯(lián)
- 電壓 - 供電:
1.7V ~ 1.9V
- 工作溫度:
0°C ~ 70°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
165-LBGA
- 供應商器件封裝:
165-FBGA(13x15)
- 描述:
IC SRAM 72MBIT PARALLEL 165FBGA
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
CYPRESS |
2020+ |
FBGA165 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
SPANSION(飛索) |
1921+ |
FBGA-165(13x15) |
3575 |
向鴻倉庫現貨,優(yōu)勢絕對的原裝! |
詢價 | ||
CY |
NA |
68900 |
原包原標簽100%進口原裝常備現貨! |
詢價 | |||
CYPRESS |
22+ |
BGA |
8000 |
原裝正品支持實單 |
詢價 | ||
Cypress(賽普拉斯) |
21+ |
FBGA-165 |
30000 |
只做原裝,質量保證 |
詢價 | ||
Cypress |
21+ |
25000 |
原廠原包 深圳現貨 主打品牌 假一賠百 可開票! |
詢價 | |||
CYPRESS |
19+ |
BGA |
68577 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | ||
CYPRESS/賽普拉斯 |
23+ |
FBGA165 |
6861 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
CYPRESS |
24+ |
BGA |
9860 |
全新原裝現貨/假一罰百! |
詢價 | ||
CYPRESS/賽普拉斯 |
24+ |
BGA |
100 |
原裝現貨假一賠十 |
詢價 |
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