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CY7C25652KV18-500BZC集成電路(IC)的存儲(chǔ)器規(guī)格書PDF中文資料
廠商型號(hào) |
CY7C25652KV18-500BZC |
參數(shù)屬性 | CY7C25652KV18-500BZC 封裝/外殼為165-LBGA;包裝為托盤;類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC SRAM 72MBIT PARALLEL 165FBGA |
功能描述 | 72-Mbit QDR? II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
文件大小 |
496.32 Kbytes |
頁(yè)面數(shù)量 |
31 頁(yè) |
生產(chǎn)廠商 | CypressSemiconductor |
企業(yè)簡(jiǎn)稱 |
Cypress【賽普拉斯】 |
中文名稱 | 賽普拉斯半導(dǎo)體公司官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2024-12-29 20:00:00 |
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CY7C25652KV18-500BZC規(guī)格書詳情
Functional Description
The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus that exists with common I/O devices. Each port is accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock.
Features
■ Separate independent read and write data ports
? Supports concurrent transactions
■ 550 MHz clock for high bandwidth
■ Four-word burst for reducing address bus frequency
■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz
■ Available in 2.5 clock cycle latency
■ Two input clocks (K and K) for precise DDR timing
? SRAM uses rising edges only
■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems
■ Data valid pin (QVLD) to indicate valid data on the output
■ On-die termination (ODT) feature
? Supported for D[x:0], BWS[x:0], and K/K inputs
■ Single multiplexed address input bus latches address inputs for read and write ports
■ Separate port selects for depth expansion
■ Synchronous internally self-timed writes
■ QDR? II+ operates with 2.5 cycle read latency when DOFF is asserted HIGH
■ Operates similar to QDR I device with 1 cycle read latency when DOFF is asserted LOW
■ Available in × 18, and × 36 configurations
■ Full data coherency, providing most current data
■ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to VDD [1]
? Supports both 1.5 V and 1.8 V I/O supply
■ HSTL inputs and variable drive HSTL output buffers
■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ JTAG 1149.1 compatible test access port
■ Phase-locked loop (PLL) for accurate data placement
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
CY7C25652KV18-500BZC
- 制造商:
Cypress Semiconductor Corp
- 類別:
集成電路(IC) > 存儲(chǔ)器
- 包裝:
托盤
- 存儲(chǔ)器類型:
易失
- 存儲(chǔ)器格式:
SRAM
- 技術(shù):
SRAM - 同步,QDR II+
- 存儲(chǔ)容量:
72Mb(2M x 36)
- 存儲(chǔ)器接口:
并聯(lián)
- 電壓 - 供電:
1.7V ~ 1.9V
- 工作溫度:
0°C ~ 70°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
165-LBGA
- 供應(yīng)商器件封裝:
165-FBGA(13x15)
- 描述:
IC SRAM 72MBIT PARALLEL 165FBGA
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Cypress(賽普拉斯) |
23+ |
NA/ |
8735 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價(jià) | ||
CYPRESS |
24+ |
FBGA153 |
23000 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價(jià) | ||
CYPRESS |
2020+ |
FBGA165 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
CYPRESS/賽普拉斯 |
22+ |
FBGA |
17500 |
原裝正品 |
詢價(jià) | ||
CYPRESS/賽普拉斯 |
22+ |
FBGA165 |
18000 |
原裝現(xiàn)貨原盒原包.假一罰十 |
詢價(jià) | ||
CYPRESS/賽普拉斯 |
22+ |
FBGA165 |
18000 |
原裝現(xiàn)貨原盒原包.假一罰十 |
詢價(jià) | ||
CYPRESS |
21+ |
FBGA165 |
390 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
Cypress Semiconductor Corp |
21+ |
96-TFBGA |
5280 |
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng) |
詢價(jià) | ||
CYPRESS |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
CYPRESS |
23+ |
FBGA165 |
390 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |