CY7C263-55DMB中文資料賽普拉斯數(shù)據(jù)手冊PDF規(guī)格書

Functional Description

The CY7C261, CY7C263, and CY7C264 are high-performance 8192-word by 8-bit CMOS PROMs. When deselected, the 7C261 automatically powers down into a low-power stand by mode. It is packaged in a 300-mil-wide package. The 7C263 and 7C264 are packaged in 300-mil-wide and 600-mil-wide packages respectively, and do not power down when deselected. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide in telligent programming algorithms.

The CY7C261, CY7C263, and CY7C264 are plug-in replacements for bipolar devices and offer the advantages of lower power, superior performance and programming yield. The EPROM cell requires only 12.5V for the supervoltage and low current requirements allow for gang programming. The EPROM cells allow for each memory location to be tested 100, as each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that after customer programming the product will meet DC and AC specification limits.

Features

? CMOS for optimum speed/power

? Windowed for reprogrammability

? High speed

— 20 ns (commercial)

— 25 ns (military)

? Low power

— 660 mW (commercial)

— 770 mW (military)

? Super low standby power (7C261)

— Less than 220 mW when deselected

— Fast access: 20 ns

? EPROM technology 100 programmable

? Slim 300-mil or standard 600-mil packaging available

? 5V ± 10 VCC, commercial and military

? Capable of withstanding greater than 2001V static discharge

? TTL-compatible I/O

? Direct replacement for bipolar PROMs