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FQA20N40

400VN-ChannelMOSFET

Features ?19.5A,400V,RDS(on)=0.22?@VGS=10V ?Lowgatecharge(typical60nC) ?LowCrss(typical45pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MGP20N40CL

SMARTDISCRETESInternallyClamped,N-ChannelIGBT

SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETES?monolithiccircuitryforusageasanIgnitionCoilDriver. ?TemperatureCompensatedGate–C

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGP20N40CL

SMARTDISCRETESInternallyClamped,N-ChannelIGBT

SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETES?monolithiccircuitryforusageasanIgnitionCoilDriver. ?TemperatureCompensatedGate–C

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

SDM20N40A

DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE

DIODES

Diodes Incorporated

SDM20N40A

DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE

Features ?LowForwardVoltageDrop ?CommonAnodeConfiguration ?LeadFreeByDesign/RoHSCompliant(Note3) ?GreenDevice(Note4)

DIODES

Diodes Incorporated

SGR20N40L

GeneralDescription

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGR20N40L

Highinputimpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGU20N40

Highinputimpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGU20N40L

Highinputimpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

STGB20N40LZ

Lowsaturationvoltage

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    20N40CID

  • 制造商：

    Harris Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
harris
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢
 詢價
N/A
23+
TO263
1778
專業(yè)優(yōu)勢供應(yīng)
 詢價
UTC
24+
TO-3P
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
UTC/友順
2022+
TO-3P
43
原廠代理 終端免費(fèi)提供樣品
 詢價
UTC/友順
2022+
TO-3P
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價
UTC/友順
20+
TO-3P
43
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
 詢價
UTC
24+/25+
TO247
2723
20年芯片代理現(xiàn)貨分銷正品保證
 詢價
ISC/固電
23+
TO-3PN
5000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
24+
N/A
65000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
 詢價
FUJI
08+
TO220F
1000
原裝現(xiàn)貨價格有優(yōu)勢量大可以發(fā)貨
 詢價
更多20N40CID供應(yīng)商 更新時間2025-3-14 10:06:00

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