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D0212C5中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書

D0212C5
廠商型號

D0212C5

功能描述

Silicon Carbide Schottky Diode

文件大小

846.51 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 Infineon Technologies AG
企業(yè)簡稱

Infineon英飛凌

中文名稱

英飛凌科技股份公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-27 10:20:00

D0212C5規(guī)格書詳情

Features:

? Revolutionary semiconductor material - Silicon Carbide

? No reverse recovery current / No forward recovery

? Temperature independent switching behavior

? Low forward voltage even at high operating temperature

? Tight forward voltage distribution

? Excellent thermal performance

? Extended surge current capability

? Specified dv/dt ruggedness

? Qualified according to JEDEC1) for target applications

? Pb-free lead plating; RoHS compliant

Benefits

? System efficiency improvement over Si diodes

? Enabling higher frequency / increased power density solutions

? System size / cost savings due to reduced heatsink requirements and smaller magnetics

? Reduced EMI

? Highest efficiency across the entire load range

? Robust diode operation during surge events

? High reliability

? RelatedLinks: www.infineon.com/sic

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