零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)4.0Ω ID2A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)4.0Ω ID2A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)5.5Ω ID2A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)5.0Ω ID2A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers etc未分類(lèi)制造商未分類(lèi)制造商 | ETC1 | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers etc未分類(lèi)制造商未分類(lèi)制造商 | ETC1 | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description TheGE02N60providethedesignerwiththebestcombinationoffastswitching. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplications.ThedeviceissuitedforDC-DC,DC-ACconvertersfortelecom,industrialandconsumerenvironment. Features *Dynami | GTMGTM CORPORATION 勤益投資控股勤益投資控股股份有限公司 | GTM | ||
MinisizeofDiscretesemiconductorelements | ETC1List of Unclassifed Manufacturers etc未分類(lèi)制造商未分類(lèi)制造商 | ETC1 | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
EMC |
23+ |
TO-251 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
EMC |
22+ |
TO-251 |
50000 |
只做原裝正品,假一罰十,歡迎咨詢 |
詢價(jià) | ||
EMC |
23+ |
NA/ |
493 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票 |
詢價(jià) | ||
INFINE0N |
23+ |
TO-252 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
infineon |
2023+ |
P-TO252 |
80000 |
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
infineon |
24+ |
P-TO252 |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
I |
23+ |
P-TO252 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
INFINEON/英飛凌 |
2022+ |
P-TO252 |
12888 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO-252 |
141750 |
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
INFINEON/英飛凌 |
2022+ |
P-TO252 |
48000 |
只做原裝,絕對(duì)原裝,假一罰十 |
詢價(jià) |
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