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STB14NM50N

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

STB14NM50N

N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD?PAK,DPAK,TO-220FP,I?PAKandTO-220packages

Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

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STD14NM50N

N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD?PAK,DPAK,TO-220FP,I?PAKandTO-220packages

Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

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STD14NM50N

N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD?PAK,DPAK,TO-220FP,I?PAKandTO-220packages

Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

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STD14NM50N

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STD14NM50NAG

Automotive-gradeN-channel500V,0.285typ.,12AMDmeshTMIIPowerMOSFETinaDPAKpackage

Features ?AEC-Q101qualified ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgeneration ofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesavertical

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STF14NM50N

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF14NM50N

N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD?PAK,DPAK,TO-220FP,I?PAKandTO-220packages

Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

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STI14NM50N

N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD?PAK,DPAK,TO-220FP,I?PAKandTO-220packages

Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

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STI14NM50N

iscN-ChannelMosfetTransistor

?FEATURES ?DrainCurrentID=12A@TC=25℃ ?DrainSourceVoltage- :VDSS=500V(Min) ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP14NM50N

N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD?PAK,DPAK,TO-220FP,I?PAKandTO-220packages

Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

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意法半導(dǎo)體意法半導(dǎo)體集團

STP14NM50N

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW14NM50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.35Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW14NM50

N-CHANNEL550V-0.32ohm-14ATO-247MDmeshPowerMOSFET

DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof

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STW14NM50FD

N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247FDmesh??PowerMOSFETwithFASTDIODE

Description TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. Generalfeatures ■100avalanchetested ■Highdv/dta

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STW14NM50FD

N-channel500V-0.32廓-12A-TO-220/FP-D2/I2PAK-TO-247FDmesh??PowerMOSFET(withfastdiode)

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供應(yīng)商型號品牌批號封裝庫存備注價格
ST
22+
TO-252
16900
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ST
24+
TO-252
200000
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INF
09+
TO-251
45
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ON/ST/哈哩嘶
23+
TO-252
9500
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SWIRE
23+
PLCC
10000
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FLOETH
89/90/91
199
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24+
500000
行業(yè)低價,代理渠道
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3000
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VICOR
21+
NA
1062
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SXSEMI
2019+PBHF
U-DFN1610-2
7318
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更多D14NM50N供應(yīng)商 更新時間2025-1-1 14:01:00

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