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D2003

METAL GATE RF SILICON FET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET5W–28V–1GHzPUSH–PULL FEATURES ?SIMPLIFIEDAMPLIFIERDESIGN ?SUITABLEFORBROADBANDAPPLICATIONS ?VERYLOWCrss ?SIMPLEBIASCIRCUITS ?LOWNOISE ?HIGHGAIN–13dBMINIMUM APPLICATIONS ?VHF/UHFCOMMUNICATIONSfrom50MHzto1G

SEME-LAB

Seme LAB

D2003UK

METAL GATE RF SILICON FET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET5W–28V–1GHzPUSH–PULL FEATURES ?SIMPLIFIEDAMPLIFIERDESIGN ?SUITABLEFORBROADBANDAPPLICATIONS ?VERYLOWCrss ?SIMPLEBIASCIRCUITS ?LOWNOISE ?HIGHGAIN–13dBMINIMUM APPLICATIONS ?VHF/UHFCOMMUNICATIONSfrom50MHzto1G

SEME-LAB

Seme LAB

DG2003

Low-VoltageDualSPSTAnalogSwitch

DESCRIPTION TheDG2003/2004/2005aredualsingle-pole/single-throwmonolithicCMOSanalogswitchdesignedforhighperformanceswitchingofanalogsignals.Combininglowpower,fastswitching,lowon-resistance(rDS(on):1.2Ω)andsmallphysicalsize(MSOP-8),theDG2003/2004/2005areidealfor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG2003

Low-VoltageDualSPSTAnalogSwitch

features LowVoltageOperation(1.8Vto5.5V) LowOn-Resistance-rDS(on):1.2 FastSwitching-14ns LowChargeInjection-QINJ:1pC LowPowerConsumption TTL/CMOSCompatible MSOP-8Package benefits ReducedPowerConsumption SimpleLogicInterface HighAccur

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG2003DQ

Low-VoltageDualSPSTAnalogSwitch

DESCRIPTION TheDG2003/2004/2005aredualsingle-pole/single-throwmonolithicCMOSanalogswitchdesignedforhighperformanceswitchingofanalogsignals.Combininglowpower,fastswitching,lowon-resistance(rDS(on):1.2Ω)andsmallphysicalsize(MSOP-8),theDG2003/2004/2005areidealfor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG2003DQ

Low-VoltageDualSPSTAnalogSwitch

features LowVoltageOperation(1.8Vto5.5V) LowOn-Resistance-rDS(on):1.2 FastSwitching-14ns LowChargeInjection-QINJ:1pC LowPowerConsumption TTL/CMOSCompatible MSOP-8Package benefits ReducedPowerConsumption SimpleLogicInterface HighAccur

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DGD2003

HALF-BRIDGEGATEDRIVER

DIODES

Diodes Incorporated

DGD2003

HALF-BRIDGEGATEDRIVERINSO-8

Features -FloatingHigh-SideDriverinBootstrapOperationto200V -DrivesTwoN-ChannelMOSFETsinaHalf-BridgeConfiguration -290mASource/600mASinkOutputCurrentCapability -OutputsToleranttoNegativeTransients -InternalDeadTimeof420nstoProtectMOSFETs -WideLowSideGat

DIODES

Diodes Incorporated

DL-LS2003

INFRAREDLASERDIODE

ETCList of Unclassifed Manufacturers

未分類制造商

DMP2003UPS

20VP-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

詳細(xì)參數(shù)

  • 型號(hào)：

    D2003

  • 制造商：

    SEME-LAB

  • 制造商全稱：

    Seme LAB

  • 功能描述：

    METAL GATE RF SILICON FET

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POINT9
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1688
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TI
23+
原包裝
9280
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POINT
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126
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POINT9
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POINT
23+
TO-59
8510
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CHMC
2447
TO-22-B
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
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POINT
2023+
高頻管
8700
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SILICONIX
24+
CDIP
200
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SILICONIX
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原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源！
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JXD
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DIP20
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更多D2003供應(yīng)商 更新時(shí)間2025-4-25 10:30:00

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