D217R2V853S中文資料仙童半導體數(shù)據(jù)手冊PDF規(guī)格書

Description

The MOCD217M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.

Features

■ UL Recognized (File #E90700, Volume 2)

■ VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD217VM)

■ Low Input Current (specified @ 1mA)

■ Minimum BVCEO of 30 Volts Guaranteed

■ Convenient Plastic SOIC-8 Surface Mountable Package Style

■ Standard SOIC-8 Footprint, with 0.050 Lead Spacing

■ High Input-Output Isolation of 2500 VAC(rms) Guaranteed

Applications

■ Interfacing and Coupling Systems of Different Potentials and Impedances

■ General Purpose Switching Circuits

■ Monitor and Detection Circuits