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D84289

RF LDMOS Wideband Integrated Power Amplifiers

TheA2I09VD030Nwidebandintegratedcircuitisdesignedwithon?chip matchingthatmakesitusablefrom575to1300MHz.Thismulti?stage structureisratedfor48to55Voperationandcoversalltypicalcellularbase stationmodulationformats. Features ?On?chipmatching(50ohminput,D

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

D844

Silicon NPN Power Transistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3P(I)package ·Complementtotype2SB754 ·Highcollectorcurrent:IC=7A ·Lowcollectorsaturationvoltage ·Highpowerdissipation APPLICATIONS ·Highcurrentswitchingapplications ·Poweramplifierapplications

SAVANTIC

Savantic, Inc.

D84629

Airfast RF Power LDMOS Transistor

Designedforhandheldtwo?wayradioapplicationswithfrequenciesfrom 136to941MHz.Thehighgain,ruggednessandwidebandperformanceofthis devicemakeitidealforlarge?signal,common?sourceamplifierapplicationsin handheldradioequipment. Features ?Characterizedforoperationf

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

D84BK2

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

D84BL2

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

D84BM2

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=2.5A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

D84BN2

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=2.5A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

D84BQ1

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=1.5A@TC=25℃ ·DrainSourceVoltage :VDSS=350V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

D84BQ2

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=1.5A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

D84CK2

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

供應商型號品牌批號封裝庫存備注價格
FSC
24+
TO-220
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價
24+
DIP
236
現(xiàn)貨供應
詢價
FUJITSU
24+
BGA
30617
一級代理全新原裝熱賣
詢價
FUJ
BGA
5350
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
詢價
NEC
25+
BGA
1196
大量現(xiàn)貨庫存,提供一站式服務!
詢價
NEC
2138+
BGA
8960
專營BGA,QFP原裝現(xiàn)貨,假一賠十
詢價
NEC
23+
BGA
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
NEC
23+
NA/
50
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
NEC
25+
BGA
50
原裝正品,假一罰十!
詢價
24+
BGA
6980
原裝現(xiàn)貨,可開13%稅票
詢價
更多D84供應商 更新時間2025-4-5 10:20:00