| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
RF LDMOS Wideband Integrated Power Amplifiers TheA2I09VD030Nwidebandintegratedcircuitisdesignedwithon?chip matchingthatmakesitusablefrom575to1300MHz.Thismulti?stage structureisratedfor48to55Voperationandcoversalltypicalcellularbase stationmodulationformats. Features ?On?chipmatching(50ohminput,D | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
Silicon NPN Power Transistors SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3P(I)package ·Complementtotype2SB754 ·Highcollectorcurrent:IC=7A ·Lowcollectorsaturationvoltage ·Highpowerdissipation APPLICATIONS ·Highcurrentswitchingapplications ·Poweramplifierapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
Airfast RF Power LDMOS Transistor Designedforhandheldtwo?wayradioapplicationswithfrequenciesfrom 136to941MHz.Thehighgain,ruggednessandwidebandperformanceofthis devicemakeitidealforlarge?signal,common?sourceamplifierapplicationsin handheldradioequipment. Features ?Characterizedforoperationf | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=2.5A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=2.5A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=1.5A@TC=25℃ ·DrainSourceVoltage :VDSS=350V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=1.5A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=5A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=5A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=3A@TC=25℃ ·DrainSourceVoltage :VDSS=350V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=3A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=2.5A@TC=25℃ ·DrainSourceVoltage :VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=2.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
FSC |
24+ |
TO-220 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
24+ |
DIP |
236 |
現(xiàn)貨供應(yīng) |
詢價(jià) | |||
FUJITSU |
24+ |
BGA |
30617 |
一級(jí)代理全新原裝熱賣 |
詢價(jià) | ||
FUJ |
BGA |
5350 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
NEC |
22+ |
BGA |
1196 |
大量現(xiàn)貨庫存,提供一站式服務(wù)! |
詢價(jià) | ||
NEC |
2138+ |
BGA |
8960 |
專營(yíng)BGA,QFP原裝現(xiàn)貨,假一賠十 |
詢價(jià) | ||
NEC |
23+ |
BGA |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
NEC |
2022 |
BGA |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
NEC |
23+ |
NA/ |
50 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
24+ |
BGA |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) |
