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DAM25N60D

N-Channel Enhancement Mode MOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

FCH25N60N

N-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCH25N60N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=126mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCH25N60N

MOSFET–N-Channel,SUPREMOS600V,25A,126m

Description TheSUPREMOS?MOSFETisONSemiconductor’snext generationofhighvoltagesuper?junction(SJ)technologyemploying adeeptrenchfillingprocessthatdifferentiatesitfromthe conventionalSJMOSFETs.Thisadvancedtechnologyandprecise processcontrolprovideslowestRspon?re

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FCI25N60N

N-ChannelSupreMOS?MOSFET600V,25A,125m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP25N60N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.125Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCP25N60N

N-ChannelSupreMOS?MOSFET600V,25A,125m廓

DIODES

Diodes Incorporated

MTY25N60E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTY25N60E

TMOSPOWERFET25AMPERES600VOLTSRDS(on)=0.21OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

SCT25N60FD

Triac

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團

SCT25N60P

Triac

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團

SIHA25N60EFL

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHA25N60EFL

ESeriesPowerMOSFETwithFastBodyDiodeandLowGateCharge

FEATURES ?Reducedfigure-of-merit(FOM):RonxQg ?FastbodydiodeMOSFETusingEseries technology ?Reducedtrr,Qrr,andIRRM ?IncreasedrobustnessduetolowQrr ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcateg

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHA25N60EFL

ESeriesPowerMOSFETwithFastBodyDiodeandLowGateCharge

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG25N60EFL

ESeriesPowerMOSFETwithFastBodyDiodeandLowGateCharge

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG25N60EFL

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHP25N60EFL

ESeriesPowerMOSFETwithFastBodyDiodeandLowGateCharge

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP25N60EFL

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

TK25N60X

MOSFETsSiliconN-ChannelMOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.2mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK25N60X

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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Hitachi
23+
TO-18
12800
原裝正品代理商最優(yōu)惠價格,現(xiàn)貨或訂貨
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2021+
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285000
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Amphenol FCI
2022+
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6800
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ITT
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493
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HITACHI
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63000
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HITACHI
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RENESAS瑞薩/HITACHI日立
24+
DO-214
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HITACHI
2023+
SMC
80000
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