首頁>DDRSDRAM1111>規(guī)格書詳情
DDRSDRAM1111中文資料三星數(shù)據(jù)手冊PDF規(guī)格書
DDRSDRAM1111規(guī)格書詳情
Features
? Double-data-rate architecture; two data transfers per clock cycle
? Bidirectional data strobe(DQS)
? Four banks operation
? Differential clock inputs(CK and CK)
? DLL aligns DQ and DQS transition with CK transition
? MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
? All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
? Data I/O transactions on both edges of data strobe
? Edge aligned data output, center aligned data input
? LDM,UDM/DM for write masking only
? Auto & Self refresh
? 15.6us refresh interval(4K/64ms refresh)
? Maximum burst refresh cycle : 8
? 66pin TSOP II package
產(chǎn)品屬性
- 型號:
DDRSDRAM1111
- 制造商:
SAMSUNG
- 制造商全稱:
Samsung semiconductor
- 功能描述:
DDR SDRAM Specification Version 1.0
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
DEGSON(高正) |
2021+ |
- |
994 |
詢價 | |||
ADAM-TECH |
23+ |
原廠原包 |
19960 |
只做進(jìn)口原裝 終端工廠免費送樣 |
詢價 | ||
Herotek |
24+ |
模塊 |
400 |
詢價 | |||
LTK |
23+ |
原廠封裝 |
90000 |
一定原裝深圳現(xiàn)貨 |
詢價 | ||
Honeywell(霍尼韋爾) |
23+ |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | |||
SAM |
24+ |
16 |
詢價 | ||||
TE/泰科 |
2452+ |
/ |
330135 |
一級代理,原裝正品現(xiàn)貨 |
詢價 | ||
C&K |
24+ |
65200 |
詢價 | ||||
KiloInternational |
新 |
40 |
全新原裝 貨期兩周 |
詢價 | |||
C&KCOMPONENT |
23+ |
65480 |
詢價 |