DG2012EDL-T1-GE3中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

FEATURES

? Low switch on-resistance (1 ?)

? 1.65 V to 5.5 V single supply operation

? Isolation in powered-off mode

? Control logic inputs can go over V+

? Low charge injection (5 pC)

? Low total harmonic distortion

? Break before make switching

? Latch-up performance exceeds 300 mA per JESD 78

? ESD tested

- 7000 V human body model (JS-001)

- 1000 V charge device model (JS-002)

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note?

* This datasheet provides information about parts that are?

RoHS-compliant and / or parts that are non RoHS-compliant. For?

example, parts with lead (Pb) terminations are not RoHS-compliant.?

Please see the information / tables in this datasheet for details

APPLICATIONS

? Smartphones and tablets

? Consumer and computing

? Portable instrumentation

? Medical equipment

DESCRIPTION

The DG2012E is a high performance single-pole,

double-throw (SPDT) analog switch designed for 1.8 V to

5.5 V operation with a single power rail.?

Fabricated with high density CMOS technology, the device

achieves low on resistance of 1 ? at a 5 V power supply, low

power consumption, and fast switching speeds. ?

The DG2012E can handle both analog and digital signals

and permits signals with amplitudes of up to V+ to be

transmitted in either direction. Its control logic inputs can go

over V+ up to 5.5 V. It features break before make switching

performance. Its -3 dB bandwidth is typically 160 MHz.?

A powered-off protection circuit is built into the switch to

prevent an abnormal current flow from COM pin to V+ during

the power-down condition. Each output pin can withstand

greater than 7 kV (human body model). ?

Operation temperature is specified from -40 °C to +85 °C.

The DG2012E is available in SC-70-6L package.