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DG613

High-Speed, Low-Glitch D/CMOS Analog Switches

DESCRIPTION TheDG611,DG612,DG613featurehigh-speedlowcapacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES ?Fastswitching-tON:12ns ?Lowchargeinjection:±2pC ?Widebandwidth:500MHz ?5

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DG613

High-Speed, Low-Glitch D/CMOS Analog Switches

FEATURES ?Fastswitching-tON:12ns ?Lowchargeinjection:±2pC ?Widebandwidth:500MHz ?5VCMOSlogiccompatible ?LowRDS(on):18? ?Lowquiescentpower:1.2nW ?Singlesupplyoperation BENEFITS ?Improveddatathroughput ?Minimalswitchingtransients ?Improvedsystem

VishayVishay Siliconix

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DG613A

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

DESCRIPTION TheDG611/612/613featurehigh-speedlow-capacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES ●FastSwitching—tON:12ns ●LowChargeInjection:2pC ●WideBandwidth:500MHz ●5-VCMOSL

VishayVishay Siliconix

威世科技威世科技半導體

DG613A

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

FEATURES ?Halogen-freeaccordingtoIEC61249-2-21 Definition ?Lowchargeinjection(1pCtyp.) ?Leakagecurrent

VishayVishay Siliconix

威世科技威世科技半導體

DG613AEN-T1-E4

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

DESCRIPTION TheDG611/612/613featurehigh-speedlow-capacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES ●FastSwitching—tON:12ns ●LowChargeInjection:2pC ●WideBandwidth:500MHz ●5-VCMOSL

VishayVishay Siliconix

威世科技威世科技半導體

DG613AEN-T1-E4

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

FEATURES ?Halogen-freeaccordingtoIEC61249-2-21 Definition ?Lowchargeinjection(1pCtyp.) ?Leakagecurrent

VishayVishay Siliconix

威世科技威世科技半導體

DG613AEQ-T1-E3

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

DESCRIPTION TheDG611/612/613featurehigh-speedlow-capacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES ●FastSwitching—tON:12ns ●LowChargeInjection:2pC ●WideBandwidth:500MHz ●5-VCMOSL

VishayVishay Siliconix

威世科技威世科技半導體

DG613AEQ-T1-E3

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

FEATURES ?Halogen-freeaccordingtoIEC61249-2-21 Definition ?Lowchargeinjection(1pCtyp.) ?Leakagecurrent

VishayVishay Siliconix

威世科技威世科技半導體

DG613AEY-T1-E3

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

DESCRIPTION TheDG611/612/613featurehigh-speedlow-capacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES ●FastSwitching—tON:12ns ●LowChargeInjection:2pC ●WideBandwidth:500MHz ●5-VCMOSL

VishayVishay Siliconix

威世科技威世科技半導體

DG613AEY-T1-E3

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

FEATURES ?Halogen-freeaccordingtoIEC61249-2-21 Definition ?Lowchargeinjection(1pCtyp.) ?Leakagecurrent

VishayVishay Siliconix

威世科技威世科技半導體

晶體管資料

  • 型號:

    DG637

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產廠家:

  • 制作材料:

  • 性質:

    射頻/高頻放大 (HF)_寬頻帶放大 (A)

  • 封裝形式:

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    0.1A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

  • 可代換的型號:

  • 最大耗散功率:

    0.4W

  • 放大倍數(shù):

  • 圖片代號:

    NO

  • vtest:

    60

  • htest:

    999900

  • atest:

    0.1

  • wtest:

    0.4

產品屬性

  • 產品編號:

    DG6

  • 制造商:

    Belden Inc.

  • 類別:

    電纜,電線 - 管理 > 電纜支撐與緊固件

  • 包裝:

    散裝

  • 描述:

    DIAMOND #6 SPLIT BOT CONNECTOR

供應商型號品牌批號封裝庫存備注價格
SiL
24+
DIP
17
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19567
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24+/25+
51
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VISHAY
2020+
DIP-8
500
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INTERSIL
08+
SOP
6878
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24+
SOP
1068
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詢價
DG
23+
SOP-8
3600
絕對全新原裝!現(xiàn)貨!特價!請放心訂購!
詢價
SILICONIX
23+
DIP8
5000
原裝正品,假一罰十
詢價
VISHAY
2016+
SOP16
3500
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詢價
SILICONIX
25+
SMD16
68
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詢價
更多DG6供應商 更新時間2025-4-21 16:00:00