DG613E中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書

FEATURES

? 3 V to 16 V single supply or ± 3 V to ± 8 V dual

supply

? Low charge injection (1.4 pC typ.)

? Leakage current < 0.25 nA at 85 °C

? Low switch capacitance (Csoff 3 pF typ.)

? Fully specified with single supply operation at

3 V, 5 V, and dual supplies at ± 5 V

? Low voltage, 2.5 V CMOS/TTL compatible

? 1 GHz, 3 dB bandwidth

? Excellent isolation performance (-59 dB at 10 MHz)

? Excellent crosstalk performance (-74 dB at 10 MHz)

? Fully specified from -40 °C to +85 °C and -40 °C to +125 °C

? 16 lead SOIC, TSSOP and miniQFN package?

(1.8 mm x 2.6 mm)

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

? Precision instrumentation

? Medical instrumentation

? Automated test equipment

? High speed communications applications

? High-end data acquisition

? Sample and hold applications

? Sample and hold systems

DESCRIPTION

The DG611E, DG612E, and DG613E contain four

independently selectable SPST switches. They offer

improved performance over the industry standard DG611

and DG611A series. The DG611E and DG612E have all

switches normally closed and normally open respectively,

while the DG613E has 2 normally open and 2 normally

closed switches.

They are designed to operate from a 3 V to 16 V single

supply or from ± 3 V to ± 8 V dual supplies and are fully

specified at +3 V, +5 V and ± 5 V. All control logic inputs

have guaranteed 2 V logic high limits when operating from

+5 V or ± 5 V supplies and 1.4 V when operating from a

+3 V supply.

The DG611E, DG612E, and DG613E switches conduct

equally well in both directions and offer rail to rail analog

signal handling.

1.4 pC low charge injection, coupled with very low switch

capacitance: 3 pF, fast switching speed: ton/toff 23 ns/14 ns

and excellent 3 dB bandwidth: 1 GHz, make these products

ideal for precision instrumentation, high-end data

acquisition, automated test equipment and high speed

communication applications.

Operation temperature is specified from -40 °C to +125 °C.

The DG611E, DG612E, and DG613E are available in 16 lead

SOIC, TSSOP and the space saving 1.8 mm x 2.6 mm

miniQFN packages.