DG636EN-T1-E4中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

FEATURES

? Ultra low charge injection

(± 0.5 pC, typ. over the full analog signal range)

? Leakage current < 0.5 nA max. at 85 °C

(for DG636EQ-T1-E3)

? Low switch capacitance (Csoff, 2 pF typ.)

? Low RDS(on) - 115 Ω max.

? Fully specified with single supply operation at 3 V, 5 V and

dual supplies at ± 5 V

? Low voltage, 2.5 V CMOS/TTL compatible

? 600 MHz, - 3 dB bandwidth

? Excellent isolation and crosstalk performance

(typ. > -60 dB at 10 MHz)

? Fully specified from -40 °C to +85 °C and -40 °C to

+125 °C

? 14 pin TSSOP and 16 pin miniQFN package

(1.8 mm x 2.6 mm)

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

? High-end data acquisition

? Medical instruments

? Precision instruments

? High speed communications applications

? Automated test equipment

? Sample and hold applications

DESCRIPTION

The DG636 is an analog CMOS, dual SPDT switch,

designed to operate from a +2.7 V to +12 V single supply or

from ± 2.7 V to ± 5 V, dual supplies. The DG636 is fully

specified at +3 V, +5 V and ± 5 V. All control logic inputs

have guaranteed 2 V logic high limits when operating from

+5 V or ± 5 V supplies and 1.4 V when operating from a 3 V

supply.

The DG636 switches conduct equally well in both directions

and offer rail to rail analog signal handling. < 1 pC

low charge injection, coupled with very low switch

capacitance and leakage current makes this product ideal

for use in precision instrumentation applications. Operating

temperature range is specified from -40 °C to +125 °C. The

DG636 is available in 14 lead TSSOP and the space saving

1.8 mm x 2.6 mm miniQFN package.