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FQA5N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQA5N90

900VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQAF5N90

900VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB5N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQB5N90

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQB5N90

900VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB5N90

N-ChannelQFETMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB5N90

N-ChannelQFET?MOSFET900V,5.4A,2.3廓

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB5N90TM

N-ChannelQFET?MOSFET900V,5.4A,2.3廓

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI5N90

N-ChannelQFETMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI5N90

900VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP5N90

900VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF5N90

IscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQPF5N90

900VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HM5N90

SiliconN-ChannelPowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

HMS5N90I

N-ChannelSuperJunctionPowerMOSFET?

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

HMS5N90K

N-ChannelSuperJunctionPowerMOSFET?

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

KSM5N90

900VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

SSH5N90

N-CHANNELPOWERMOSFETS

SamsungSamsung semiconductor

三星三星半導體

SSH5N90A

ADVANCEDPOWERMOSFET

SamsungSamsung semiconductor

三星三星半導體

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23+
TO-251
80000
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QFN
6698
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DENSEI
23+
ZIP18
10000
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24+
con
35960
查現(xiàn)貨到京北通宇商城
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COUNTERDI
2010+
130
普通
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COUNTERDIGITAL
2023+
8700
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24+
N/A
6800
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APEX
18+
200
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