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DR314

GERMANIUMDOIDES

GERMANIUMDIODES

AAC

American Accurate Components, Inc.

DR314

GERMANIUMDOIDES

AMMSEMI

American Microsemiconductor

DTC314T

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TK

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TK

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TS

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TU

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TU

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

EL-314

InfraredEmittingDiodes(GaAs)

TheEL-314ahigh-powerGaAsIREDmountedinaclearsidelookingpackage,iscompact,lowprofile,andeasytomount. FEATURES ?Compact ?Lowprofilepackage ?Low-cost ?Sidelookingplasticpackage APPLICATIONS ?Photointerrupters ?Opticalswitches ?Toys

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

ESDS314

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

ESDS314

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

ESDS314

ESDS31xData-LineSurgeandESDProtectionDiodeArray

1Features ?IEC61000-4-2ESDprotection: –±30kVContactDischarge –±30kVAirGapDischarge ?IEC61000-4-4EFTprotection: –80A(5/50ns) ?IEC61000-4-5surgeprotection: –25A(8/20μs) ?IOcapacitance: –4.5pF(typical) ?DCbreakdownvoltage:5.5V(minimum) ?Ultralowleakagec

TI1Texas Instruments

德州儀器

ESDS314DBVR

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

ESDS314DBVR

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

ESDS314DBVR

ESDS31xData-LineSurgeandESDProtectionDiodeArray

1Features ?IEC61000-4-2ESDprotection: –±30kVContactDischarge –±30kVAirGapDischarge ?IEC61000-4-4EFTprotection: –80A(5/50ns) ?IEC61000-4-5surgeprotection: –25A(8/20μs) ?IOcapacitance: –4.5pF(typical) ?DCbreakdownvoltage:5.5V(minimum) ?Ultralowleakagec

TI1Texas Instruments

德州儀器

EVAL-ADXL314Z

?200gRange,3-AxisDigitalAccelerometer

GENERALDESCRIPTION TheADXL314isa±200grange,13-bitresolution,3-axisdigital accelerometer.Thedigitaloutputdataisformattedas16-bit,twos complementdataandisaccessiblethroughaserialperipheral interface(SPI),3-wireor4-wire,oranI2Cdigitalinterface. Anintegrated

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

EVAL-ADXL314Z

±200gRange,3-AxisDigitalAccelerometer

GENERALDESCRIPTION TheADXL314isa±200grange,13-bitresolution,3-axisdigital accelerometer.Thedigitaloutputdataisformattedas16-bit,twos complementdataandisaccessiblethroughaserialperipheral interface(SPI),3-wireor4-wire,oranI2Cdigitalinterface. Anintegrated

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

F-314X

ChassisMountSingleSecondary

TRIAD

TRIAD MAGNETICS

FDG314P

DigitalFET,P-Channel

GeneralDescription ThisP-ChannelenhancementmodefieldeffecttransistorisproducedusingFairchildSemiconductor’sproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessistailoredtominimizeonstateresistanceatlowgatedriveconditions.Thisdeviceisdesigned

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

H314

LANDISCRETETRANSFORMERMODULES

pulse

Pulse A Technitrol Company

詳細(xì)參數(shù)

  • 型號(hào):

    DM-314

  • 制造商:

    Labfacility Limited

  • 功能描述:

    SENSOR PT100 THIN FILM 1.2X1.6MM

  • 制造商:

    LABFACILITY

  • 功能描述:

    SENSOR, PT100, THIN FILM, 1.2X1.6MM

  • 功能描述:

    SENSOR, PT100, THIN FILM, 1.2X1.6MM; Lead

  • Length:

    1.6mm; Sensing Temperature

  • Min:

    -50C; Sensing Temperature

  • Max:

    +550C; Approval

  • Bodies:

    IEC; Approval

  • Category:

    Class A; External

  • Length/Height:

    1.6mm; External

  • Width:

    1.2mm; ;RoHS

  • Compliant:

    Yes

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TY
23+
65480
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大東
15+
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250
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9558
全新原裝數(shù)量均有多電話咨詢
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7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
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7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
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大東
24+
DIP
68900
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126
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NS
23+
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9823
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MicrochipTechnology
24+
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6000
進(jìn)口原裝正品假一賠十,貨期7-10天
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Microchip Technology Inc.
2022+
4
全新原裝 貨期兩周
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MCRCH
24+
65230
詢價(jià)
更多DM-314供應(yīng)商 更新時(shí)間2025-1-12 14:10:00