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DMG3415UFY4-7中文資料DIODES數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DMG3415UFY4-7
廠(chǎng)商型號(hào)

DMG3415UFY4-7

功能描述

P-CHANNEL ENHANCEMENT MODE MOSFET

文件大小

149.27 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

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更新時(shí)間

2025-2-8 22:58:00

DMG3415UFY4-7規(guī)格書(shū)詳情

Description and Applications

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

? Backlighting

? Power Management Functions

? DC-DC Converters

Features and Benefits

? Low On-Resistance

? Low Input Capacitance

? Fast Switching Speed

? Low Input/Output Leakage

? ESD Protected Up To 3kV

? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

? Halogen and Antimony Free. “Green” Device (Note 3)

? Qualified to AEC-Q101 Standards for High Reliability

? An Automotive-Compliant Part is Available Under Separate Datasheet (DMG3415UFY4Q)

產(chǎn)品屬性

  • 型號(hào):

    DMG3415UFY4-7

  • 功能描述:

    MOSFET MOSFET P-CHAN.

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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