首頁(yè) >DMG6968UQ>規(guī)格書(shū)列表

零件編號(hào)下載 訂購(gòu)功能描述/絲印制造商 上傳企業(yè)LOGO

DMG6968UQ

N-CHANNEL ENHANCEMENT MODE MOSFET

Description ThisMOSFETisdesignedtomeetthestringentrequirementsof automotiveapplications.ItisqualifiedtoAEC-Q101,supportedbya PPAPandisidealforusein: Applications ?Powermanagementfunctions ?DC-DCconverters ?Motorcontrols Features ?LowOn-Resistance ?Lo

DIODES

Diodes Incorporated

DMG6968UQ-7

N-CHANNEL ENHANCEMENT MODE MOSFET

Description ThisMOSFETisdesignedtomeetthestringentrequirementsof automotiveapplications.ItisqualifiedtoAEC-Q101,supportedbya PPAPandisidealforusein: Applications ?Powermanagementfunctions ?DC-DCconverters ?Motorcontrols Features ?LowOn-Resistance ?Lo

DIODES

Diodes Incorporated

DMG6968UQ-7

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

Diodes Incorporated

DMG6968UQ-7

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

Diodes Incorporated

DMG6968UTS

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features ?LowOn-Resistance ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage MechanicalData ?Case:TSSOP-8 ?CaseMaterial:MoldedPlastic,“Green”MoldingCompound.ULFlammabilityClassificationRating94V-0 ?MoistureSensitivity:Level1perJ-STD-020 ?Ter

DIODES

Diodes Incorporated

GF6968A

Common-DrainDualN-ChannelMOSFET

Features ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignforUltraLowOn-Resistance ?SpeciallyDesignedforLi-ionbatterypacksuse ?Designedforbattery-switchapplications

GE

GE Industrial Company

GF6968AD

N-ChannelEnhancement-ModeMOSFETDie

Features ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignforUltraLowOn-Resistance ?FastSwitching ?HightemperaturesolderinginaccordancewithCECC802/Reflowguaranteed ?LogicLevel ?IdealforLiionbatterypackapplications

GE

GE Industrial Company

H6968CS

DualN-ChannelEnhancement-ModeMOSFET(20V,6.5A)(BatterySwitch,ESDProtected)

Features ?RDS(on)=32m?@VGS=2.5V,ID=5.5A ?RDS(on)=24m?@VGS=4.5V,ID=6.5A ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignforUltraLowOn-Resistance ?SpeciallyDesignedforLiionBatteryPacksUse ?DesignedforBatterySwitchAppliactions ?ESDProtected

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H6968CTS

DualN-ChannelEnhancement-ModeMOSFET(20V,6.5A)BatterySwitch,ESDProtected)

Features ?RDS(on)

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H6968S

DualN-ChannelEnhancement-ModeMOSFET(20V,6.5A)(BatterySwitch,ESDProtected)

Features ?RDS(on)=32m?@VGS=2.5V,ID=5.5A ?RDS(on)=24m?@VGS=4.5V,ID=6.5A ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignforUltraLowOn-Resistance ?SpeciallyDesignedforLiionBatteryPacksUse ?DesignedforBatterySwitchAppliactions ?ESDProtected

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    DMG6968UQ

  • 制造商:

    TYSEMI

  • 制造商全稱(chēng):

    TY Semiconductor Co., Ltd

  • 功能描述:

    N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
DIODES/美臺(tái)
24+
SOT23
786000
全新原裝假一罰十
詢(xún)價(jià)
DIODES/美臺(tái)
2021+
SOT23
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢(xún)價(jià)
DIODES
2016+
SOT23
2900
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
詢(xún)價(jià)
DIODES/美臺(tái)
22+
SOT23
90000
正規(guī)代理渠道假一賠十
詢(xún)價(jià)
DIODES/美臺(tái)
1936+
SOT23
6852
只做原裝正品現(xiàn)貨或訂貨!假一賠十!
詢(xún)價(jià)
DIODES
2020+
SOT-23
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
詢(xún)價(jià)
DIODES/美臺(tái)
23+
CutTape
12730
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
詢(xún)價(jià)
DIODES
1809+
SOT-23-3
6675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢(xún)價(jià)
DIODES/美臺(tái)
22+
SOT-23
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
詢(xún)價(jià)
Diodes(美臺(tái))
23+
NA
20094
正納10年以上分銷(xiāo)經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
詢(xún)價(jià)
更多DMG6968UQ供應(yīng)商 更新時(shí)間2025-1-21 17:37:00