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DMN5L06DMKQ

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. ?GeneralPurposeInterfacingSwitch ?PowerManagementFunctions Features ?LowOn-Resi

DIODES

Diodes Incorporated

DMN5L06DMKQ-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. ?GeneralPurposeInterfacingSwitch ?PowerManagementFunctions Features ?LowOn-Resi

DIODES

Diodes Incorporated

DMN5L06DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?“Green”Device(Note3)

DIODES

Diodes Incorporated

DMN5L06DWK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance(1.0VMax) ?VeryLowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?ESDProtectedupto2kV ?TotallyLead-Free&FullyRoHSCompliant(Notes1

DIODES

Diodes Incorporated

DMN5L06DWK

DUALN-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMN5L06DWK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN5L06K

N-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMN5L06K

N-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications Thisnewgeneration50VN-ChannelEnhancementModeMOSFET hasbeendesignedtominimizeRDS(on)andyetmaintainsuperior switchingperformance.ThisdeviceisidealforuseinNotebook batterypowermanagementandLoadswitch. FeaturesandBenefits ?LowOn-Re

DIODES

Diodes Incorporated

DMN5L06K

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications Thisnewgeneration50VN-ChannelEnhancementModeMOSFEThasbeendesignedtominimizeRDS(on)andyetmaintainsuperiorswitchingperformance.ThisdeviceisidealforuseinNotebookbatterypowermanagementandLoadswitch. ?Loadswitches ?Levelswitches Feat

DIODES

Diodes Incorporated

DMN5L06T

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?N-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?“Green”Device(Note3)

DIODES

Diodes Incorporated

DMN5L06TK

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN5L06TK

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance ?VeryLowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?LeadFreeByDesign/RoHSCompliant(Note2) ?ESDProtectedUpTo2kV ?GreenDevice(Note3) ?QualifiedtoAEC-Q101standardsforHighReliability

DIODES

Diodes Incorporated

DMN5L06V

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?“Green”Device(Note3)

DIODES

Diodes Incorporated

DMN5L06VA

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?“Green”Device(Note3)

DIODES

Diodes Incorporated

DMN5L06VAK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage,1.0VMax ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAnt

DIODES

Diodes Incorporated

DMN5L06VK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage,1.0VMax ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAnt

DIODES

Diodes Incorporated

DMN5L06W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?N-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?“Green”Device(Note3)

DIODES

Diodes Incorporated

DMN5L06WK

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance ?VeryLowGateThresholdVoltage(1.0Vmax) ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?ESDProtectedUpTo2kV ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3

DIODES

Diodes Incorporated

DMN5L06WK

N-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

SR5L06

5ALOWVFTRENCHMOSSCHOTTKYRECTIFIERS60V

PACELEADERPACELEADER INDUSTRIAL

霈峰霈峰實(shí)業(yè)有限公司

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90000
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24+
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786000
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15+
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9000
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21+
SOT-26
26970
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1809+
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3675
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更多DMN5L06DMKQ供應(yīng)商 更新時(shí)間2024-12-26 12:20:00