首頁(yè) >DMN5L06VAK>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
DMN5L06VAK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage,1.0VMax ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAnt | DIODES Diodes Incorporated | DIODES | |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage,1.0VMax ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAnt | DIODES Diodes Incorporated | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage,1.0VMax ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAnt | DIODES Diodes Incorporated | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage,1.0VMax ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAnt | DIODES Diodes Incorporated | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage,1.0VMax ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAnt | DIODES Diodes Incorporated | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage,1.0VMax ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAnt | DIODES Diodes Incorporated | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES Diodes Incorporated | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage,1.0VMax ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAnt | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?N-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?“Green”Device(Note3) | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance ?VeryLowGateThresholdVoltage(1.0Vmax) ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?ESDProtectedUpTo2kV ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3 | DIODES Diodes Incorporated | DIODES | ||
5ALOWVFTRENCHMOSSCHOTTKYRECTIFIERS60V | PACELEADERPACELEADER INDUSTRIAL 霈峰霈峰實(shí)業(yè)有限公司 | PACELEADER | ||
TURBO2ULTRAFASTHIGHVOLTAGERECTIFIER FEATURESANDBENEFITS ■Ultrafastswitching ■Lowreverserecoverycurrent ■Reducesswitching&conductionlosses ■Lowthermalresistance DESCRIPTION TheSTTH5L06,whichisusingSTTurbo2600V technology,isspeciallysuitedasboostdiodein discontinuousorcriticalmodepowerfact | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
Turbo2ultrafasthighvoltagerectifier | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
Turbo2ultrafasthighvoltagerectifier | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
TURBO2ULTRAFASTHIGHVOLTAGERECTIFIER Description TheSTTH5L06,whichusesSTTurbo2600Vtechnology,isspeciallysuitedasboostdiodeindiscontinuousorcriticalmodepowerfactorcorrections. Thisdevice,availableinTO-220AC,TO-220FPACDPAKandDO-201AD,isalsointendedforuseasafreewheelingdiodeinpowersuppliesan | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
Turbo2ultrafasthighvoltagerectifier | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
TURBO2ULTRAFASTHIGHVOLTAGERECTIFIER Description TheSTTH5L06,whichusesSTTurbo2600Vtechnology,isspeciallysuitedasboostdiodeindiscontinuousorcriticalmodepowerfactorcorrections. Thisdevice,availableinTO-220AC,TO-220FPACDPAKandDO-201AD,isalsointendedforuseasafreewheelingdiodeinpowersuppliesan | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS |
詳細(xì)參數(shù)
- 型號(hào):
DMN5L06VAK
- 制造商:
DIODES
- 制造商全稱:
Diodes Incorporated
- 功能描述:
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
DIODE |
2405+ |
原廠封裝 |
3696 |
原裝正品,渠道可追溯 |
詢價(jià) | ||
DIODE |
23+ |
NA |
3696 |
公司現(xiàn)貨原裝 |
詢價(jià) | ||
DIODES |
24+ |
15000 |
詢價(jià) | ||||
DIODES/美臺(tái) |
22+ |
SOT563 |
90000 |
正規(guī)代理渠道假一賠十 |
詢價(jià) | ||
DIODES/美臺(tái) |
2021+ |
SOT26 |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
DIODES/美臺(tái) |
23+ |
SOT-563 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
DIODES |
23+ |
SOT563 |
15000 |
公司只做原裝現(xiàn)貨庫(kù)存! |
詢價(jià) | ||
DIODES/美臺(tái) |
23+ |
SOT-563 |
20000 |
原裝正品 歡迎咨詢 |
詢價(jià) | ||
DIODES美臺(tái) |
24+23+ |
SOT-563 |
12580 |
16年現(xiàn)貨庫(kù)存供應(yīng)商終端BOM表可配單提供樣品 |
詢價(jià) | ||
DIODES |
2015+ |
SOT563 |
995300 |
原裝現(xiàn)貨價(jià)格優(yōu)勢(shì)-含16%增值稅 |
詢價(jià) |
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