首頁>DS1225Y-170-IND>規(guī)格書詳情
DS1225Y-170-IND中文資料亞德諾數(shù)據(jù)手冊(cè)PDF規(guī)格書
DS1225Y-170-IND規(guī)格書詳情
DESCRIPTION
The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and writeprotection is unconditionally enabled to prevent data corruption. The NV SRAM can be used in place of existing 8k x 8 SRAMs directly conforming to the popular bytewide 28-pin DIP standard.
FEATURES
10 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Directly replaces 2k x 8 volatile static RAM or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 28-pin DIP package
Read and write access times as fast as 150 ns
Full ±10 operating range
Optional industrial temperature range of
-40°C to +85°C, designated IND
產(chǎn)品屬性
- 型號(hào):
DS1225Y-170-IND
- 制造商:
DALLAS
- 制造商全稱:
Dallas Semiconductor
- 功能描述:
64K Nonvolatile SRAM
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
DALLAS |
22+ |
SOT-23 |
9600 |
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單! |
詢價(jià) | ||
DALLAS |
24+ |
DIP |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
DALLAS |
22+ |
module-28 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
MAX |
2016+ |
DIP28 |
5621 |
只做原裝,假一罰十,內(nèi)存,閃存,公司可開17%增值稅 |
詢價(jià) | ||
DALAS |
24+ |
170 |
現(xiàn)貨供應(yīng) |
詢價(jià) | |||
DALLAS |
24+ |
DIP |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
DS |
2023+ |
DIP |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
DALLAS |
24+ |
DIP |
1068 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
DAL |
9145;9218 |
2 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | |||
DALLAS |
24+ |
DIP |
60 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) |