DS1230W集成電路（IC）的存儲器規(guī)格書PDF中文資料

DESCRIPTION

The DS1230W 3.3V 256k Nonvolatile SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230W devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard.

FEATURES

■ 10 years minimum data retention in the absence of external power

■ Data is automatically protected during power loss

■ Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory

■ Unlimited write cycles

■ Low-power CMOS

■ Read and write access times of 100ns

■ Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time

■ Optional industrial temperature range of -40°C to +85°C, designated IND

■ JEDEC standard 28-pin DIP package

■ PowerCap Module (PCM) package

- Directly surface-mountable module

- Replaceable snap-on PowerCap provides lithium backup battery

- Standardized pinout for all nonvolatile SRAM products

- Detachment feature on PowerCap allows easy removal using a regular screwdriver