訂購數量 | 價格 |
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首頁>DS1230Y-120IND>詳情
DS1230Y-120IND 集成電路(IC)存儲器 DALLAS/亞德諾
- 詳細信息
- 規(guī)格書下載
產品參考屬性
- 類型
描述
- 產品編號:
DS1230Y-120IND
- 制造商:
Analog Devices Inc./Maxim Integrated
- 類別:
- 包裝:
管件
- 存儲器類型:
非易失
- 存儲器格式:
NVSRAM
- 技術:
NVSRAM(非易失性 SRAM)
- 存儲容量:
256Kb(32K x 8)
- 存儲器接口:
并聯(lián)
- 寫周期時間 - 字,頁:
120ns
- 電壓 - 供電:
4.5V ~ 5.5V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
通孔
- 封裝/外殼:
28-DIP 模塊(0.600",15.24mm)
- 供應商器件封裝:
28-EDIP
- 描述:
IC NVSRAM 256KBIT PAR 28EDIP
供應商
- 企業(yè):
深圳市富芯樂電子科技有限公司
- 商鋪:
- 聯(lián)系人:
朱小姐
- 手機:
15919825718
- 詢價:
- 電話:
15919825718
- 地址:
深圳市福田區(qū)華強北街道荔村社區(qū)振興路120號賽格科技園4棟中10層1號10B15
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