DS1330BL-70-IND中文資料亞德諾數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The DS1330 256K Nonvolatile SRAMs are 262,144–bit, fully static, nonvolatile SRAMs organized as 32,768 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.

FEATURES

? Built–in lithium battery provides more than 10 years of data retention

? Data is automatically protected during VCC power loss

? Power supply monitor resets processor when VCC power loss occurs and holds processor in reset during VCC ramp–up

? Battery monitor checks remaining capacity daily

? Read and write access times as fast as 70 ns

? Unlimited write cycle endurance

? Typical standby current 50 μA

? Upgrade for 32K x 8 SRAM, EEPROM or Flash devices

? Lithium battery is electrically disconnected to retain freshness until power is applied for the first time

? Full ±10 VCC operating range (DS1330YL) or optional ±5 VCC operating range (DS1330BL)

? Low Profile Module package fits into standard 68–pin surface mountable PLCC sockets

? Optional industrial temperature range of –40°C to +85°C, designated IND