DS2431P-A1+T集成電路（IC）的存儲(chǔ)器規(guī)格書PDF中文資料

DS2431P-A1+T屬于集成電路（IC）的存儲(chǔ)器。由亞德諾半導(dǎo)體技術(shù)有限公司制造生產(chǎn)的DS2431P-A1+T存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

General Description

The DS2431-A1 is an AEC-Q100 Grade 1 qualified version

of the DS2431. The logical behavior of both versions

is identical. The DS2431-A1 is a 1024-bit, 1-Wire?

EEPROM chip organized as four memory pages of 256

bits each. Data is written to an 8-byte scratchpad, verified,

and then copied to the EEPROM memory. As a special

feature, the four memory pages can individually be write

protected or put in EPROM-emulation mode, where bits

can only be changed from a 1 to a 0 state.

The DS2431-A1 communicates over the single-conductor

1-Wire bus. The communication follows the standard

1-Wire protocol. Each device has its own unalterable and

unique 64-bit ROM registration number that is factory

lasered into the chip. The registration number is used to

address the device in a multidrop 1-Wire net environment.

Features

● 1024 Bits of EEPROM Memory Partitioned Into

Four Pages of 256 Bits

● Individual Memory Pages Can Be Permanently

Write Protected or Put in EPROM-Emulation Mode

(“Write to 0”)

● Switchpoint Hysteresis and Filtering to Optimize

Performance in the Presence of Noise

● IEC 1000-4-2 Level 4 ESD Protection

(+8kV Contact, +15kV Air, Typ)

● Reads and Writes Over a 4.5V to 5.25V Voltage

Range from -40°C to +125°C

● Communicates to Host with a Single Digital

Signal at 15.4kbps Using 1-Wire Protocol

● Meets AEC-Q100 Grade 1 Qualification

Requirements

● Also Available as Standard Version for Industrial

Temperature Range (DS2431)

Applications

● Automotive Sensor Identification and Calibration

Data Storage

● Automotive Cable Assembly Identification

● Accessory/PCB Identification