DS28E07P+T集成電路（IC）的存儲器規(guī)格書PDF中文資料

DS28E07P+T屬于集成電路（IC）的存儲器。由亞德諾半導體技術有限公司制造生產(chǎn)的DS28E07P+T存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

General Description

The DS28E07 is a 1024-bit, 1-Wire? EEPROM chip organized

as four memory pages of 256 bits each. Data is

written to an 8-byte scratchpad, verified, and then copied

to the EEPROM memory. As a special feature, the four

user memory pages can individually be write protected

or put in EPROM-emulation mode, where bits can only

be changed from a 1 to a 0 state. Each device has its

own guaranteed unique 64-bit ROM identification number

(ROM ID) that is factory programmed into the chip. The

communication follows the 1-Wire protocol with the ROM

ID acting as node address in the case of a multiple-device

1-Wire network.

Benefits and Features

● Partitioning of Memory Provides Greater Flexibility in

Programming User Data

? 1024 Bits of EEPROM Memory Organized as Four

Pages of 256 Bits

? Individual Memory Pages Can Be Permanently

Write Protected or Put in EPROM-Emulation Mode

(Write to 0)

● Advanced 1-Wire Protocol Minimizes Interface to

Just Single IO Reducing Required Pin Count and

Enhancing Reliability

? Unique Factory-Programmed, Unalterable 64-Bit

Identification Number

? Switchpoint Hysteresis and Filtering to Optimize

Performance in the Presence of Noise

? Communicates to Host with a Single Digital Signal

at 15.4kbps or 125kbps Using 1-Wire Protocol

? Reads and Writes over a Wide Voltage Range from

3.0V to 5.25V from -40°C to +85°C

? ±8kV HBM ESD Protection (typ) for IO Pin

Applications

● Accessory/PCB Identification

● Medical Sensor Calibration Data Storage

● Analog Sensor Calibration Including IEEE P1451.4

Smart Sensors

● Ink and Toner Print Cartridge Identification

● After-Market Management of Consumables