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FDZ299P

P-Channel2.5VSpecifiedPowerTrenchBGAMOSFET

GeneralDescription CombiningFairchild’sadvanced2.5VspecifiedPowerTrenchprocesswithstateoftheartBGApackaging,theFDZ299PminimizesbothPCBspaceandRDS(ON).ThisBGAMOSFETembodiesabreakthroughinpackagingtechnologywhichenablesthedevicetocombineexcellentthermaltransf

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HCTS299D

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

Intersil

Intersil Corporation

HCTS299D

RadiationHardened8-BitUniversalShiftRegister;Three-State

Intersil

Intersil Corporation

HCTS299D

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS299DMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS299DMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Intersil

Intersil Corporation

HCTS299DMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

Intersil

Intersil Corporation

HCTS299HMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Intersil

Intersil Corporation

HCTS299HMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

Intersil

Intersil Corporation

HCTS299HMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    DS299-R

  • 制造商：

    Miyama Electric

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324554
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23+
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3000
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
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24+
N/A
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XUNPU(訊普)
23+
插件,P=2.54mm
426
原裝現(xiàn)貨/專做開關(guān)15年
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TI
2023+
SOT23-3
8700
原裝現(xiàn)貨
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C&K
20+
開關(guān)元件
396
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
C&K
2021+
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499
詢價(jià)
更多DS299-R供應(yīng)商 更新時(shí)間2025-1-26 8:00:00

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